FD800R33KL2C-K_B5 Infineon Technologies, FD800R33KL2C-K_B5 Datasheet

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FD800R33KL2C-K_B5

Manufacturer Part Number
FD800R33KL2C-K_B5
Description
IGBT Modules N-CH 3.3KV 1.5KA
Manufacturer
Infineon Technologies
Datasheet
1.FD800R33KL2C-K_B5.pdf (8 pages)

Specifications of FD800R33KL2C-K_B5

Configuration
Dual
Collector- Emitter Voltage Vceo Max
3300 V
Continuous Collector Current At 25 C
1500 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
IHV190
Ic (max)
800.0 A
Vce(sat) (typ)
3.4 V
Technology
IGBT2 Low Loss
Housing
IHV 190 mm

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
FD800R33KL2C-K_B5
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Technische Information / technical information
IGBT-Module
IGBT-modules
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
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preliminary data
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FD800R33KL2C-K_B5 Summary of contents

Page 1

... Technische Information / technical information FD800R33KL2C-K_B5 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values " " " " > " $ Charakteristische Werte / characteristic values " > > " "> " $ " F " " " " > > 1 " %& ' ()* %& ' ()* , ' )*1 %& ()*1 %& ()*1 %& ...

Page 2

... Technische Information / technical information FD800R33KL2C-K_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values 8 $ " > 8 " > > P Charakteristische Werte / characteristic values 0 $ > " " > > 1 " %& ' ()* %& ' ()* %& ()* %& ()* + + 7DL +: ' 7DL +: ' 7DL +: ' d9HG ADU deSQHGQ ' 2 ADU Vorläufige Daten ...

Page 3

... Technische Information / technical information FD800R33KL2C-K_B5 IGBT-Module IGBT-modules Modul / module " " " > " > 1 " P " > > " > > $ Modulinduktivität: IGBT (Zweig 1+2 parallel): 20nH; Diode (Zweig 3): 25nH stray inductance module: IGBT (arm 1+2 parallel): 20 nH; diode (arm 3): 25nH Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehö ...

Page 4

... Technische Information / technical information FD800R33KL2C-K_B5 IGBT-Module IGBT-modules " $ " 3 " $ " 3 3=a 3 3=a 3 U+,- U+,- U+,- U+,- 1600 %& ' ()* 1400 %& ()* 1200 1000 800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 ...

Page 5

... Technische Information / technical information FD800R33KL2C-K_B5 IGBT-Module IGBT-modules 3 3 > > 3 > > 3 #54 ' UMBW1 #5ZZ ' UMBW #54 ' UMBW1 #5ZZ ' UMBW #54 ' UMBW1 #5ZZ ' UMBW #54 ' UMBW1 #5ZZ ' UMBW + + + + +,- ' 2 71 +,- ' 2 71 +,- ' 2 71 +,- ' 2 12000 #541 %& ()* #5ZZ1 %& ()* ...

Page 6

... Technische Information / technical information FD800R33KL2C-K_B5 IGBT-Module IGBT-modules > > > > #SQj ' U3gW #SQj ' U3gW #SQj ' U3gW #SQj ' U3gW MB54 ' / O1 +,- ' 2 MB54 ' / O1 +,- ' 2 MB54 ' / O1 +,- ' 2 MB54 ' / O1 +,- ' 1400 #SQj1 %& ()* 1200 1000 800 600 400 200 0 0 200 400 600 800 1000 1200 1400 1600 ...

Page 7

... Technische Information / technical information FD800R33KL2C-K_B5 IGBT-Module IGBT-modules Schaltplan / circuit diagram Gehäuseabmessungen / package outlines ! 7 Vorläufige Daten preliminary data ...

Page 8

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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