BSM300GB60DLC Infineon Technologies, BSM300GB60DLC Datasheet - Page 5

• Manufacturer Part Number: BSM300GB60DLC
• Description: IGBT Modules 600V 300A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM300GB60DLC

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Continuous Collector Current At 25 C: 375 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1.25 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 62MM
• Ic (max): 300.0 A
• Vce(sat) (typ): 1.95 V
• Technology: IGBT2 Low Loss
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
600
500
400
300
200
100
600
500
400
300
200
100
0
0
0,0
5
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
0,2
6
Tvj = 25°C
Tvj = 125°C
Tvj = 25°C
Tvj = 125°C
0,4
7
BSM 300 GB 60 DLC
0,6
8
5 (8)
V
V
GE
F
0,8
9
[V]
[V]
1,0
10
I
C
V
= f (V
CE
= 20V
1,2
11
GE
)
I
F
= f (V
1,4
12
F
)
BSM 300 GB 60 DLC S1
1,6
13
2000-02-08