FF800R17KE3_B2 Infineon Technologies, FF800R17KE3_B2 Datasheet - Page 2

• Manufacturer Part Number: FF800R17KE3_B2
• Description: IGBT Modules N-CH 1.7KV 1.2KA
• Manufacturer: Infineon Technologies

Specifications of FF800R17KE3_B2

• Configuration: Dual Dual Collector Dual Emitter
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 1200 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Ic (max): 800.0 A
• Vce(sat) (typ): 2.0 V
• Technology: IGBT3
• Housing: IHM 130 mm

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
<
4
4
<
A
7h
4
O
'
;
7
c
B
&
&
(
(
B
(
&
H & B
(
'
(
'
(
(
H & B
(
&
(
B
6 `
6
(
<
(
&
(
(
(
FF800R17KE3_B2
)*+ , -.
/> ,
7g , 5
7g , 5
7g , 5
/> , M
/D1 , "- /
7g , 5
/> , M
/D1 , "- /
7g , 5
/> , M
/D1 , "- /
d=JICS , "
= , " &
4
4
/6 = , " & 6 )*+ , " -.
;6 /D1 ,
;6 /D1 ,
;6
;6
;6
/
/
/
F
#"
FV&_$W F
gF
gF
gF
, M
, M
, M
/
/
deUSJIS , "
2
! ""
;FN
;FN
;FN
FV&_$W
)*+ , -.
)*+ , " -.
)*+ , -.
)*+ , " -.
)*+ , -.
)*+ , " -.
)*+ , -.
)*+ , " -.
Vorläufige Daten
preliminary data
OCK0f
/>>?
OCKb0
7g>?
%USi
7>?
/g
LU
7h
7g
& #
"3
"@
" -
"6--
"6@
5
M
"@
5
6
#
& G#
6
6
$F
$F
N
N
&[
&[
;h
/
;
;
/
/
;
;