FS35R12KE3G Infineon Technologies

FS35R12KE3G

Manufacturer Part Number

FS35R12KE3G

Description

IGBT Modules 1200V 35A 3-PHASE

Manufacturer

Infineon Technologies

Specifications of FS35R12KE3G

Configuration

Hex

Collector- Emitter Voltage Vceo Max

1200 V

Collector-emitter Saturation Voltage

2.15 V

Continuous Collector Current At 25 C

55 A

Gate-emitter Leakage Current

400 nA

Power Dissipation

200 W

Maximum Operating Temperature

+ 125 C

Maximum Gate Emitter Voltage

+/- 20 V

Minimum Operating Temperature

- 40 C

Mounting Style

Screw

Package / Case

EconoPACK 2B

Ic (max)

35.0 A

Vce(sat) (typ)

1.7 V

Technology

IGBT3

Housing

EconoPACK 2

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FS35R12KE3G

Manufacturer:

Quantity:

134

Company:

Meier Automation Equipment Co., Limited

Part Number:

FS35R12KE3G

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

FS35R12KE3G

Quantity:

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

FS35R12KE3G

Quantity:

147

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