FF150R12YT3 Infineon Technologies, FF150R12YT3 Datasheet - Page 5

• Manufacturer Part Number: FF150R12YT3
• Description: IGBT Modules N-CH 1.2KV 200A
• Manufacturer: Infineon Technologies

Specifications of FF150R12YT3

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 200 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EASY2
• Ic (max): 150.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EasyDUAL 2

Technische Information / technical information
IGBT-Module
IGBT-modules
%
%
$54 * VNAX2 $5[[ * VNAX
$54 * VNAX2 $5[[ * VNAX
-A/ * Y + -2 3. * +
-A/ * Y + -2 3. * +
%
%
3. * V-./X
3. * V-./X
-A/ * Y + -2 NA5[[ * 2L P2 '() *
-A/ * Y + -2 NA5[[ * 2L P2 '() *
%
%
$54 * VNAX2 $5[[ * VNAX
$54 * VNAX2 $5[[ * VNAX
-A/ * Y + -2 3. * +
-A/ * Y + -2 3. * +
%
%
3. * V-./X
3. * V-./X
-A/ * Y + -2 NA5[[ * 2L P2 '() *
-A/ * Y + -2 NA5[[ * 2L P2 '() *
>
>
>
>
350
300
250
200
150
100
40
35
30
25
20
15
10
50
5
0
0
&
&
&
&
0
0
N
N
N
N
200
3
>E
>E
>E
>E
3= ' @
3= ' @
3= ' @
3= ' @
3= ' 3
3= ' 3
3= ' 3
3= ' 3
$542 '() *
$5[[2 '() *
3.2
3.2
6
400
2 -./ *
2 -./ *
2 -./ *
2 -./ *
&
&
&
&
9
600
+,
+,
-./ p-r
NA pPr
" V
" V
" V
" V
V
V
V
V
12
3= '
3= '
3= '
3= '
800
3= ' @ " VN %| X
3= ' @ " VN %| X
3= ' @ " VN %| X
3= ' @ " VN %| X
-
-
-
-
+,
+,
+,
+,
15
FF150R12YT3
X
X
X
X
X
X
X
X
1000 1200 1400
" VN %| X
" VN %| X
" VN %| X
" VN %| X
18
"
21
24
5
'
'
'
'
{?Jae * V X
{?Jae * V X
{?Jae * V X
{?Jae * V X
1
1
1
1
3f * V-fX
3f * V-fX
3f * V-fX
3f * V-fX
>
>
>
>
0,01
!
300
270
240
210
180
150
120
0,1
90
60
30
1
0,001
0
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
@E
@E
@E
@E
{?Jae 3= '
'() * +,
'() *
0,01
>
>
>
>
Op#C@r
Op r
1
1
1
1
+,
2
2
3= '
3= '
3= '
3= '
@
@
@
@
-f p-r
3= ' @
3= ' @
3= ' @
3= ' @
I
0,1
+
Vorläufige Daten
preliminary data
p r
2
2
+
L
V
V
V
V
" V
" V
" V
" V
<
2 L LH
2 +
1
"
"
X
X
"
"
X
X
L
2 L++
2
X
X
X
X
10