FZ600R12KE3B1 Infineon Technologies, FZ600R12KE3B1 Datasheet - Page 3
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FZ600R12KE3B1
Manufacturer Part Number
FZ600R12KE3B1
Description
IGBT Modules N-CH 1.2KV 900A
Manufacturer
Infineon Technologies
Datasheet
1.FZ600R12KE3B1.pdf
(9 pages)
Specifications of FZ600R12KE3B1
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
900 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
62MM
Ic (max)
600.0 A
Vce(sat) (typ)
1.7 V
Technology
IGBT3
Housing
62 mm
Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
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