BSM75GP60 Infineon Technologies, BSM75GP60 Datasheet - Page 7

• Manufacturer Part Number: BSM75GP60
• Description: IGBT Modules 600V 75A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM75GP60

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.2 V
• Continuous Collector Current At 25 C: 100 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 310 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: Econo PIM3
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 100A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
4,5
3,5
2,5
1,5
0,5
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0
0
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
20
5
Eon
Eoff
Erec
Eon
Eoff
Erec
40
10
BSM75GP60
60
R
I
C
G
15
[A]
7(11)
E
[ ]
T
E
T
on
j
= 125°C,
j
on
= 125°C, V
= f (I
80
= f (R
C
), E
G
20
), E
GE
off
V
100
= +-15 V ,
off
GE
= f (I
= ±15 V,
= f (R
C
), E
25
G
), E
rec
I
120
c
= I
= f (I
rec
nenn
R
Gon
= f (R
C
,
)
= R
V
V
30
CC
CC
140
G
Goff
)
=
=
=
300 V
18 Ohm
300 V
160
35
DB-PIM-10.xls