BSM100GAL120DN2 Infineon Technologies, BSM100GAL120DN2 Datasheet

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BSM100GAL120DN2

Manufacturer Part Number
BSM100GAL120DN2
Description
IGBT Modules 1200V 100A CHOPPER
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSM100GAL120DN2

Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.5 V
Continuous Collector Current At 25 C
150 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
800 W
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
20 V
Mounting Style
Screw
Package / Case
Half Bridge GAL 2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSM100GAL120DN2
Manufacturer:
EUPEC
Quantity:
492
Part Number:
BSM100GAL120DN2
Quantity:
50
BSM 100 GAL 120 DN2
IGBT Power Module
• Single switch with chopper diode at collector
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 100 GAL 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Diode thermal resistance, chip-case,chopper
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
V
1200V 150A
= 1 ms
CE
I
C
1
Package
HALF BRIDGE GAL 2 C67076-A2012-A70
V
V
V
I
I
P
T
T
R
R
R
V
-
-
-
-
Symbol
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
THJCDC
Ordering Code
40 / 125 / 56
-40 ... + 125
Values
+ 150
± 20
1200
1200
2500
F
150
100
300
200
800
20
11
0.16
0.25
0.3
Nov-24-1997
Unit
V
A
W
°C
K/W
Vac
mm
sec

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BSM100GAL120DN2 Summary of contents

Page 1

BSM 100 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 100 GAL 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate ...

Page 2

BSM 100 GAL 120 DN2 Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage 100 ...

Page 3

BSM 100 GAL 120 DN2 Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 6.8 Gon Rise time V = 600 V, ...

Page 4

BSM 100 GAL 120 DN2 Electrical Characteristics Parameter Chopper Diode Chopper diode forward voltage I = 150 150 ...

Page 5

IGBT-Module IGBT-Modules GAL type GAR type Update of Drawing Sep-21-98 Gehäusemaße / Schaltbild Package outline / Circuit diagram PIN 6 and 7 GAL type only PIN 4 and 5 GAR type only ...

Page 6

... Technische Information / Technical Information IGBT-Module BSM100GAL120DN2 IGBT-Modules Anhang C-Serie Appendix C-series Gehäuse spezifische Werte Housing specific values Modulinduktivität stray inductance module Gehäusemaße C-Serie Package outline C-series typ sCE Appendix C-series nH Appendix_C-Serie_BSM100GAL120DN2 2001-09-20 ...

Page 7

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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