FMM6G50US60 Fairchild Semiconductor, FMM6G50US60 Datasheet - Page 5
FMM6G50US60
Manufacturer Part Number
FMM6G50US60
Description
IGBT Modules
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMM6G50US60.pdf
(9 pages)
Specifications of FMM6G50US60
Configuration
Hex
Collector- Emitter Voltage Vceo Max
600 V
Continuous Collector Current At 25 C
50 A
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
PM-AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2003 Fairchild Semiconductor Corporation
Fig 7. Turn-On Characteristics vs.
Fig 9. Switching Loss vs. Gate Resistance
Fig 11. Turn-Off Characteristics vs.
Common Emitter
V
I
T
T
Common Emitter
V
I
T
T
C
C
CC
C
C
Common Emitter
V
T
T
C
C
CC
= 50A
= 50A
= 25 ] øø
= 125 ] ------
GE
C
C
= 25 ] øø
= 125 ] ------
Gate Resistance
= 300V, V
= 300V, V
= 25 ] øø
= 125 ] ------
= 15V, R
Collector Current
GE
GE
= 15V
G
= 15V
= 10 Ω
Ω
Ω
Fig 8. Turn-Off Characteristics vs.
Fig 10. Turn-On Characteristics vs.
Fig 12. Switching Loss vs. Collector Current
Common Emitter
V
I
T
T
C
Common Emitter
V
T
T
C
C
CC
Gate Resistance
Common Emitter
V
T
T
= 50A
C
C
GE
= 25 ] øø
= 125 ] ------
GE
C
C
= 300V, V
Collector Current
= 25 ] øø
= 125 ] ------
= 25 ] øø
= 125 ] ------
= 15V, R
= 15V, R
GE
G
= 15V
G
= 10 Ω
= 10 Ω
Ω
FMM6G50US60 Rev. A