FMM7G30US60N Fairchild Semiconductor, FMM7G30US60N Datasheet - Page 6

• Manufacturer Part Number: FMM7G30US60N
• Description: IGBT Modules 600V 30A Module
• Manufacturer: Fairchild Semiconductor

Specifications of FMM7G30US60N

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 30 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
9
6
3
0
1 E - 3
1 0 0 0
0 . 0 1
1 0 0
0 . 1
90
80
70
60
50
40
30
20
10
Fig 13. Gate Charge Characteristics
Fig 15. Forward Characteristics
1 0
Fig 17. Rectifier( Converter ) Characteristics
0
1 5
1 2
1
0
0
0
Common Cathode
V
T
T
C
C
GE
C o m m o n E m i t t e r
R
T
= 25℃
= 125℃
C
L
= 0V
= 1 0
= 2 5
2 0
Ω
V
o
4 0 0
C
1
R
, Reverse Voltage [V]
Forward Voltage, V
G a t e C h a r g e , Q
4 0
8 0 0
2
V
C C
= 1 0 0 V
6 0
g
F
[ n C ]
[V]
1 2 0 0
2 0 0 V
3
T
C
8 0
= 125 ℃
3 0 0 V
25 ℃
1 6 0 0
1 0 0
4
Fig 18. Rectifier( Converter ) Characteristics
Fig 14. RBSOA Characteristics
Fig 16. Reverse Recovery Characteristics
100
0.1
10
100
0.5
1
0.1
20
10
10
1
0.4
1
0
Single Nonrepetitive
Pulse T
V
R
GE
G
5
= 15 Ω
= 15V
100
0.6
J
≤ 125℃
Collector-Emitter Voltage, V
V
10
F
Forward Current, I
, Forward Voltage [V]
200
T
C
0.8
=125 ℃
15
300
1.0
400
20
25 ℃
F
Common Cathode
di/dt = 60A/us
T
T
[A]
C
C
500
= 25℃
= 100℃
CE
25
1.2
[V]
600
FMM7G30US60N Rev. A
30
I
T
rr
1.4
rr
700