FZ1200R33KF2C Infineon Technologies, FZ1200R33KF2C Datasheet - Page 3

• Manufacturer Part Number: FZ1200R33KF2C
• Description: IGBT Transistors 3300V 1200A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ1200R33KF2C

• Configuration: Triple Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 3300 V
• Collector-emitter Saturation Voltage: 3.4 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 2000 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 14.5 KW
• Maximum Operating Temperature: + 125 C
• Package / Case: IS5a ( 62 mm )-9
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Channel Type: N
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 3.4 V
• Technology: IGBT2 Standard
• Housing: IHV 190 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Modul / module
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but guarantees no characteristics.
It is valid with the appropriate technical explanations.
3
(
$
2
P
P
$
.
c
P
P
7
QU
(
7 9
7 9
? @
@
E
9 F
P
%&
%8
%
a
9
%BF
%
w
@
F
7
'
%?
'
;
E
3
$
@
@
#
#
9
w
;
;
@
E
# 7
#
FZ1200R33KF2C
MP'; + ," Q9; +
MP'; + ," Q9; K:n o "
()* + !,- ; ""
$
$
$
$
d:HGAR +
(/ + !,- ;
'
'
'
P
% $
% $
% $
% $
!#"
B V r$W deTRHGR +
U
U
s@
@ PJ
@ P>
@ P
!""
3
V
B V r$W
#
3&
! \W
Vorläufige Daten
preliminary data
M//tu00t
()* 6H_
./0 n
MAI/f
.k1lm
.k1lm
()* 5v
(GAe
G/0
P
P
?
(3
>;!,
%>"
%>"
;
;"
#
7 '
q >""
>;""
"; !
7 p
J;"
!;J
,""
!;"
!;"
Y;"
Y;"
%
%
%
""
"
#
,;\,
!;
,"
!,
!,
"
E#
$ B
p
p
p
-
-
-
.
.
.
Q
O