FZ1600R12KE3 Infineon Technologies

FZ1600R12KE3

Manufacturer Part Number

FZ1600R12KE3

Description

IGBT Transistors 1200V 1600A SINGLE

Manufacturer

Infineon Technologies

Specifications of FZ1600R12KE3

Configuration

Dual Common Emitter Common Gate

Collector- Emitter Voltage Vceo Max

1200 V

Collector-emitter Saturation Voltage

1.7 V

Maximum Gate Emitter Voltage

+/- 20 V

Continuous Collector Current At 25 C

1600 A

Gate-emitter Leakage Current

400 nA

Power Dissipation

7.8 KW

Maximum Operating Temperature

+ 125 C

Package / Case

IHM 130X140-7

Minimum Operating Temperature

- 40 C

Mounting Style

Screw

Ic (max)

1,600.0 A

Vce(sat) (typ)

1.7 V

Technology

IGBT3

Housing

IHM 130 mm

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FZ1600R12KE3

Manufacturer:

INFINEON

Quantity:

120

Company:

Meier Automation Equipment Co., Limited

Part Number:

FZ1600R12KE3

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

FZ1600R12KE3

Quantity:

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