SIGC156T60NR2C Infineon Technologies, SIGC156T60NR2C Datasheet

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SIGC156T60NR2C

Manufacturer Part Number
SIGC156T60NR2C
Description
IGBT Transistors IGBT CHIP IN NPT TECHNOLOGY
Manufacturer
Infineon Technologies
Datasheet

Specifications of SIGC156T60NR2C

Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Package / Case
Die
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Technology
Standard IGBT 2
Vds (max)
600.0 V
Ic (max)
200.0 A
Vce(sat) (max)
2.5 V
Vge(th) (min)
4.5 V
IGBT Chip in NPT-technology
FEATURES:
Chip Type
SIGC156T60NR2C 600V
MECHANICAL PARAMETER:
Raster size
Area total / active
Emitter pad size
Gate pad size
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
Edited by INFINEON Technologies AI PS DD HV3, L 7282-M, Edition 2, 28.11.2003
600V NPT technology
100µm chip
short circuit prove
positive temperature coefficient
easy paralleling
V
CE
I
Cn
200A
Die Size
12.5 x 12.5 mm
This chip is used for:
Applications:
IGBT-Modules
drives
suitable for epoxy and soft solder die bonding
< 6 month at an ambient temperature of 23°C
store in original container, in dry nitrogen,
electrically conductive glue or solder
SIGC156T60NR2C
2
8x( 2.58x4.78 )
156.25 / 138.2
1400 nm Ni Ag –system
12.5 x 12.5
0.8 x 1.46
Package
0.65mm ; max 1.2mm
3200 nm Al Si 1%
sawn on foil
100
150
90
84
Al, 500µm
Photoimide
Ordering Code
Q67050-A4013-
G
A001
mm
mm
deg
µm
C
E
2

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SIGC156T60NR2C Summary of contents

Page 1

... FEATURES: 600V NPT technology 100µm chip short circuit prove positive temperature coefficient easy paralleling Chip Type V CE SIGC156T60NR2C 600V MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer ...

Page 2

... Reverse transfer capacitance SWITCHING CHARACTERISTICS (tested at component), Inductive Load: Parameter Turn-on delay time Rise time Turn-off delay time Fall time 1) values also influenced by parasitic L- and C- in measurement and package. Edited by INFINEON Technologies HV3, L 7282-M, Edition 2, 28.11.2003 SIGC156T60NR2C Symbol jmax C I jmax ...

Page 3

... CHIP DRAWING: Edited by INFINEON Technologies HV3, L 7282-M, Edition 2, 28.11.2003 SIGC156T60NR2C ...

Page 4

... Life support devices or systems are intended to be implanted in the human body support and / or maintain and sustain and / or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies HV3, L 7282-M, Edition 2, 28.11.2003 SIGC156T60NR2C BSM 200 GD 60 DLC Econo Pack 3 ...

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