FGH30N60LSD Fairchild Semiconductor, FGH30N60LSD Datasheet - Page 7

• Manufacturer Part Number: FGH30N60LSD
• Description: IGBT Transistors 1.1V 30A High Speed
• Manufacturer: Fairchild Semiconductor

Specifications of FGH30N60LSD

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH30N60LSD Rev. A2
Figure 20. Typical Forward Voltage Drop
Figure 22. Typical Reverse Recovery Time
100
200
190
180
170
160
150
140
130
120
110
100
0.1
10
90
80
70
60
50
40
30
20
10
1
0
0.0
100
0.4
T
C
T
=125
C
0.8
= 25
T
C
o
1E-3
FORWARD VOLTAGE, V
=25
0.01
C
o
0.1
C
o
1
1E-5
T
C
1.2
C
=75
0.05
0.02
T
200
0.5
0.2
di/dt [A/
0.1
o
0.01
C
C
Figure 19. Transient Thermal Impedance of IGBT
1.6
= 75
o
C
single pulse
T
µ
C
s]
2.0
= 125
1E-4
o
F
300
C
2.4
[V]
2.8
400
I
1E-3
Rectangular Pulse Duration [sec]
F
= 15A
3.2
500
7
Figure 21. Typical Reverse Current
0.01
1E-4
1E-5
1E-6
1E-7
1E-8
1E-9
0
0.1
100
Duty Factor, D = t1/t2
Peak T
T
P
C
DM
= 125
REVERSE VOLTAGE, V
200
j
o
= Pdm x Zthjc + T
C
t
1
1
t
2
T
C
300
= 25
T
C
= 75
o
C
o
C
C
10
400
R
[V]
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500
600