BUP314 Infineon Technologies

IGBT Transistors TRANS IGBT CHIP N-CH 1200V, 52A

BUP314

Manufacturer Part Number
BUP314
Description
IGBT Transistors TRANS IGBT CHIP N-CH 1200V, 52A
Manufacturer
Infineon Technologies

Specifications of BUP314

Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
50 A
Gate-emitter Leakage Current
600 nA
Power Dissipation
190 W
Maximum Operating Temperature
+ 150 C
Package / Case
TO-247-3
Continuous Collector Current Ic Max
52 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUP314
Manufacturer:
SIEMENS
Quantity:
1 052
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUP314
Manufacturer:
IXYS
Quantity:
1 000
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUP314D
Manufacturer:
SIEMENS
Quantity:
5 510
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUP314D
Manufacturer:
FSC
Quantity:
20 000
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUP314S
Manufacturer:
INFINEON
Quantity:
10 000
Price:

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