SKW10N60A Infineon Technologies, SKW10N60A Datasheet

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... Allowed number of short circuits: <1000; time between short circuits: >1s. for target applications http://www.infineon.com/igbt Marking C CE(sat) j 2.3V K10N60 PG-TO-220-3-1 150 C 2.3V K10N60 PG-TO-247-3 150 C Symbol jmax - I I jmax SKP10N60A SKW10N60A G PG-TO-247-3 PG-TO-220-3-1 Package Value 600 10 -55...+150 260 Rev. 2.3 ...

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... =20V =20V, I =10A =25V f=1MHz =10A =15V PG- TO- 220- 3-1 E PG- TO- 247- 3- =15V 0V 150 SKP10N60A SKW10N60A Max. Value Unit 1.35 K/W 2 Value Unit min. Typ. max. 600 - - V 1.7 2 2.4 - 2.3 2.8 1.2 1.4 1.8 - 1.25 1. 1500 - - 100 550 660 ...

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... 80nH =55pF Energy losses include “tail” and diode E reverse recovery 150 =10A 200A SKP10N60A SKW10N60A Value Unit min. typ. max 178 214 - 0.15 0.173 mJ - 0.17 0.221 - 0.320 0.394 - 220 - 200 - - 310 - 180 - A/ s Value Unit min. typ. max. ...

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... CASE TEMPERATURE C Figure 3. Power dissipation as a function of case temperature (T 150 10kH z 100kH Figure 2. Safe operating area ( ° ° C Figure 4. Collector current as a function of case temperature (V 15V SKP10N60A SKW10N60A COLLECTOR EMITTER VOLTAGE = 150 ° ° ° ° CASE TEMPERATURE C 150 C) j Rev. 2.3 ...

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... GATE EMITTER VOLTAGE GE Figure 7. Typical transfer characteristics (V = 10V COLLECTOR CE Figure 6. Typical output characteristics (T = 150 °C 8V 10V T , JUNCTION TEMPERATURE j Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SKP10N60A SKW10N60A EMITTER VOLTAGE ° ° °C Rev. 2.3 Sep 08 ...

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... Dynamic test circuit in Figure E) 5,5V 5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V 150°C -50°C T Figure 12. Gate-emitter threshold voltage as a function of junction temperature = 0/+15V 0.3mA SKP10N60A SKW10N60A GATE RESISTOR G = 150 400V 10A ax. typ. m in. 0°C 50°C 100°C 150°C ...

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... Dynamic test circuit in Figure K/W D=0.5 0.2 0 K/W 0.05 0.02 0. K/W single pulse -3 10 K/W 1µs 150°C Figure 16. IGBT transient thermal impedance as a function of pulse width = 0/+15V SKP10N60A SKW10N60A and E include losses GATE RESISTOR G = 150 400V 10A 0.4287 0.0358 -3 0.4830 4.3*10 -4 ...

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... CE j 1nF 100pF 10pF COLLECTOR CE Figure 18. Typical capacitance as a function of collector-emitter voltage ( 1MHz Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V 600V 150 SKP10N60A SKW10N60A C iss rss 10V 20V 30V - EMITTER VOLTAGE GATE EMITTER VOLTAGE Rev. 2.3 Sep 08 ...

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... T R Dynamic test circuit in Figure Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V = 200V Dynamic test circuit in Figure E) 9 SKP10N60A SKW10N60A DIODE CURRENT SLOPE = 125 /dt, DIODE CURRENT SLOPE = 125 C, j Rev. 2.3 Sep 08 ...

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... Figure 27. Diode transient thermal impedance as a function of pulse width ( 2.0V 1.5V 1.0V -40°C 1.5V 2.0V Figure 26. Typical diode forward voltage as a function of junction temperature , ( 5.53*10 -3 4.28*10 -4 4.83*10 -5 5.77* SKP10N60A SKW10N60A I = 20A 10A F 0°C 40°C 80°C 120° JUNCTION TEMPERATURE j Rev. 2.3 Sep 08 ...

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... PG-TO220-3-1 11 SKP10N60A SKW10N60A Rev. 2.3 Sep 08 ...

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... SKP10N60A SKW10N60A MAX 0.203 0.099 Z8B00003327 0.083 0.052 0 0.095 0.085 0.133 0.123 0.027 0.831 7.5mm 0.695 0.053 0.631 0.557 0.201 0.102 3 0 ...

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... Figure A. Definition of switching times Figure B. Definition of switching losses Published by Infineon Technologies AG, SKP10N60A SKW10N60A i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity =180nH =55pF. Rev. 2.3 Sep 08 ...

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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SKP10N60A SKW10N60A 14 Rev. 2.3 Sep 08 ...