SGB04N60 Infineon Technologies, SGB04N60 Datasheet
SGB04N60
Specifications of SGB04N60
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SGB04N60 Summary of contents
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... Soldering temperature: (reflow soldering, MSL1) 2 J-STD-020 and JESD-022 1) Allowed number of short circuits: <1000; time between short circuits: >1s. for target applications http://www.infineon.com/igbt Marking C CE(sat)150°C j 2.3V G04N60 150 C jmax , 1 SGB04N60 G PG-TO-263-3-2 (D²-PAK) (TO-263AB) Package PG-TO-263-3-2 Symbol Value V 600 9.4 4 ...
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Symbol Conditions unless otherwise specified Symbol Conditions (one layer thick) copper area for 2 SGB04N60 Max. Value 2 Value min. Typ. max. 600 - = 1.7 2.0 2.4 - 2.3 2 500 = 100 = 4 A 3.1 - 264 317 - Rev. 2.3 Unit K/W Unit - Nov 06 ...
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... =150 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery SGB04N60 Value Unit min. typ. max 237 284 - 0.070 0.081 mJ - 0.061 0.079 - 0.131 0.160 Value Unit min. typ. max 264 317 - 104 125 - 0 ...
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... I c 10A 1A 0.1A 0.01A 1V 100kHz V CE Figure 2. Safe operating area ( 12A 10A 25°C 125°C Figure 4. Collector current as a function of case temperature (V 15V SGB04N60 200 s 1ms DC 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE = 150 50°C 75°C 100°C 125° CASE TEMPERATURE ...
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... V CE Figure 6. Typical output characteristics (T = 150 C) j 4.0V 3.5V -55°C 3.0V 2.5V 2.0V 1.5V 1.0V 8V 10V -50°C Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SGB04N60 =20V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE 0°C 50°C 100°C 150° JUNCTION TEMPERATURE j Rev ...
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... V = 0/+15V Dynamic test circuit in Figure E) 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature = 0/+15V 0.2mA SGB04N60 d(on) 50 100 150 200 R , GATE RESISTOR G = 150 400V 4A, C 0°C 50°C 100°C 150° ...
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... I GE Dynamic test circuit in Figure E) D=0 K/W 0.2 0.1 0. K/W 0. K/W 150°C 1µs Figure 16. IGBT transient thermal impedance as a function of pulse width = 0/+15V SGB04N60 and E include losses off 100 150 200 R , GATE RESISTOR G = 150 400V 4A 0.815 0.0407 ...
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... GE 70A 60A 50A 40A 30A 20A 10A 0A 14V 15V 10V 12V V GE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V 600V SGB04N60 C iss C oss C rss 10V 20V 30V - EMITTER VOLTAGE 14V 16V 18V 20V , - GATE EMITTER VOLTAGE = 150 C) j Rev ...
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... PG-TO263-3-2 9 SGB04N60 Rev. 2.3 Nov 06 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Published by Infineon Technologies AG, SGB04N60 ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity =180nH =180pF. Rev. 2.3 Nov 06 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SGB04N60 11 Rev. 2.3 Nov 06 ...