T1851N70TOH Infineon Technologies, T1851N70TOH Datasheet - Page 6

• Manufacturer Part Number: T1851N70TOH
• Description: SCR Modules NETZ-THYRISTOR PHASE CONTROL
• Manufacturer: Infineon Technologies

Specifications of T1851N70TOH

• Rated Repetitive Off-state Voltage Vdrm: 7000 V
• Off-state Leakage Current @ Vdrm Idrm: 500 mA
• Holding Current (ih Max): 350 mA
• Package / Case: T-12026K
• Breakover Current Ibo Max: 50000 A
• Gate Trigger Current (igt): 350 mA
• Gate Trigger Voltage (vgt): 2.5 V
• Repetitive Peak Forward Blocking Voltage: 7000 V

BIP AM / SM PB, 2001-04-09, Przybilla J. / Keller
N
Phase Control Thyristor
v
G
Netz-Thyristor
[V]
20
10
5
2
1
0,5
0,2
30
Höchstzulässige Spitzensteuerverlustleistung / Maximum rated peak gate power dissipation P
10
20
Steuercharakteristik v
Gate characteristic v
Datenblatt / Data sheet
50
a - 20 W/10ms
Durchlassverluste
+125°C
100
G
G
T 1851N
= f (i
= f (i
b - 40 W/1ms
G
200
G
) with triggering area for V
+25°C
) mit Zündbereichen für V
i
G
[mA]
-40°C
c - 60 W/0,5ms
500
1000
D
D
= 12 V
= 12 V
2000
Seite/page
GM
a
= f (t
5000
g
) :
b
10000
c
6/9