T160N18EOF Infineon Technologies, T160N18EOF Datasheet - Page 2

• Manufacturer Part Number: T160N18EOF
• Description: SCR Modules 1.8KV 3.8KA
• Manufacturer: Infineon Technologies

Specifications of T160N18EOF

• Rated Repetitive Off-state Voltage Vdrm: 1800 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Holding Current (ih Max): 200 mA
• Mounting Style: Stud
• Package / Case: TFL36
• Breakover Current Ibo Max: 3800 A
• Gate Trigger Current (igt): 150 mA
• Gate Trigger Voltage (vgt): 1.4 V
• Repetitive Peak Forward Blocking Voltage: 1800 V

Elektrische Eigenschaften
Höchstzulässige Werte
Charakteristische Werte
Thermische Eigenschaften
Mechanische Eigenschaften
T 160 N
repetitive peak forward off-state and
reverse voltages
non-repetitive peak forward off-state
voltage
non-repetitive peak reverse voltage
RMS on-state current
average on-state current
surge current
I
critical rate of rise of on-state current
critical rate of rise of off-state voltage
on-state voltage
threshold voltage
slope resistance
gate trigger current
gate trigger voltage
gate non-trigger current
gate non-trigger voltage
holding current
latching current
forward off-state and reverse currents
gate controlled delay time
circuit commutated turn-off time
thermal resistance, junction to case
max. junction temperature
operating temperature
storage temperature
Si-pellet with pressure contact
tightening torque
clamping force
weight, case design E
creepage distance
humidity classification
vibration resistance
outlines, attached
Electrical properties
Maximum rated values
Characteristic values
Thermal properties
Mechanical properties
2
t-value
t
t
t
t
t
t
t
t
t
v
v
t
t
t
t
t
t
t
t
t
t
i
t
t
siehe Techn.Erl./see Techn. Inf.
DC
Gehäuseform/case design B
Gehäuseform/case design E
DIN 40040
f = 50 Hz
DIN 41 894-222A4/DIN 41892-204B3
GM
vj
vj
vj
c
c
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
D
L
=25°C, i
= 85°C
= 73°C
=10 V, i
= -40°C...t
= -40°C...t
= +25°C...t
= 25°C, t
= t
= 25°C, t
= t
= t
= t
= t
= t
= 25 °C, v
= 25 °C, v
= t
= t
= 25 °C, v
= 25 °C,v
= t
=180° el, sin
=0,75 A, di
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max,
67%, v
, t
, t
, v
, i
, v
, v
GM
GM
v
p
p
T
p
p
D
D
D
D
D
= 0,75 A, di
DRM
D
D
D
vj max
vj max
= 10 ms
= 10 ms
= 10 ms
= 10 ms
= 600 A
= V
=0,75 A,di
vj max
= 67% V
= 6 V
= 0,5 V
= 6 V, R
= 6 V
= 6 V
= 6 V, R
G
, f = 50 Hz
/dt =0,75 A/µs, t
DRM
, v
DRM
GK
DRM
A
R
G
G
= V
= 5
/dt =0,75 A/µs
/dt =0,75 A/µs
10
RRM
g
= 20 µs
V
V
V
I
I
I
I
(di
(dv/dt)
v
V
r
I
V
I
V
I
I
i
t
t
R
t
t
t
M
F
G
TRMSM
TAVM
TSM
2
GT
GD
H
L
D
gd
q
vj max
c op
stg
T
T
DRM
DSM
RSM
T(TO)
GT
GD
, i
thJC
t
T
/dt)
R
, V
= V
= V
cr
cr
RRM
DRM
RRM
600 800 1000 1200
600 800 1000 1200
700 900 1100 1300
1400 1600 1800
1400 1600 1800
1500 1700 1900
-40...+125
-40...+150
max. 1,96
max. 0,15
max. 0,14
max. 150
max. 200
max. 620
max. 1,4
max. 0,2
max. 4,5
typ. 200
typ. 190
max. 30
max. 5
72000
58000
3800
3400
1000
1,08
1,53
300
160
190
150
125
3,5
20
50
8
°C/W
°C/W
A/µs
V/µs
m/s²
mm
m
A
A
mA
mA
mA
mA
Nm
mA
kN
µs
µs
°C
°C
°C
2
2
V
V
V
A
A
A
A
A
V
V
V
V
C
s
s
g