PTFB211803EL V1 R250 Infineon Technologies, PTFB211803EL V1 R250 Datasheet - Page 10

• Manufacturer Part Number: PTFB211803EL V1 R250
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB211803EL V1 R250

• Configuration: Single
• Resistance Drain-source Rds (on): 0.05 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.3 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB211803ELV1R25NT

Reference circuit assembly diagram (not to scale)
Confidential, Limited Internal Distribution
Reference Circuit
Circuit Assembly Information
Test Fixture Part No.
Find Gerber files for this test fixture on the Infineon Web site at
Data Sheet
R802
RF_IN
C102
R102
C105
R803
S4
RO4350, .020
R804
(cont.)
LTN/PTFB211803EF
R101
C106
C802 C801
C103
C104
S2
C107
PTFB211803_IN_01
C101
C108
R805
R801
C803
S1
(60)
V
http://www.infineon.com/rfpower
DD
10 of 14
RO4350, .020
C202
C210
C209
C206
C208
C207
C203
PTFB211803_OUT_01
C205
C204
C201
(60)
b 2 1 1 8 0 3 e f l _ c d _ 1 1 - 0 8 - 2 0 1 0
PTFB211803EL
RF_OUT
PTFB211803FL
V
V
DD
DD
Rev. 05, 2010-11-10