PTFB211803EL V1 R250 Infineon Technologies, PTFB211803EL V1 R250 Datasheet - Page 4

• Manufacturer Part Number: PTFB211803EL V1 R250
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB211803EL V1 R250

• Configuration: Single
• Resistance Drain-source Rds (on): 0.05 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.3 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB211803ELV1R25NT

Confidential, Limited Internal Distribution
Typical Performance
Data Sheet
55
45
35
25
15
20
19
18
17
16
15
2080
40
Two-tone Broadband Performance
V
DD
42
2100
ƒ
Efficiency
= 30 V, I
1
Gain
= 2170 MHz, ƒ
V
Output Power, PEP (dBm)
Two-tone Drive-up
44
DD
2120
= 30 V, I
Frequency (MHz)
DQ
46
= 1.30 A, P
IRL
Gain
2140
IMD3
(cont.)
DQ
48
2
= 1.30 A,
= 2169 MHz
2160
50
O UT
Efficiency
= 63 W
2180
52
2200
54
0
50
40
30
20
10
-10
-20
-30
-40
-50
4 of 14
-20
-30
-40
-50
-15
-25
-35
-45
-55
-65
40
41
V
DD
= 30 V, I
42
43
ƒ
1
= 2170 MHz, ƒ
V
2170MHz
2140MHz
2110MHz
Selected Frequencies
Two-tone Drive-up at
Two-tone Drive-up
44
Output Power, PEP (dBm)
DD
Output Power, PEP (dBm)
DQ
45
= 30 V, I
= 1.30 A, tone spacing = 1 MHz
46
47
Efficiency
DQ
48
2
= 1.30 A,
= 2169 MHz
PTFB211803EL
PTFB211803FL
49
50
Rev. 05, 2010-11-10
IMD3
51
52
54
53
50
40
30
20
10
0