BF1105WR T/R NXP Semiconductors, BF1105WR T/R Datasheet - Page 11

• Manufacturer Part Number: BF1105WR T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1105WR T/R

• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 7 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT-4
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 7V
• Power Gain (typ)@vds: 38@5VdB
• Noise Figure (max): 2.5dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.6@5V@Gate 2pF
• Output Capacitance (typ)@vds: 1.2@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1105WR,115

NXP Semiconductors
1997 Dec 02
Plastic surface-mounted package; reverse pinning; 4 leads
N-channel dual-gate MOS-FETs
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT143R
1.1
0.9
A
max
A 1
0.1
3
2
y
0.48
0.38
b p
IEC
0.88
0.78
b 1
e 1
D
e
0.15
0.09
c
JEDEC
3.0
2.8
D
b 1
REFERENCES
b p
0
1.4
1.2
E
4
1
1.9
w
SC-61AA
e
B
JEITA
scale
M
11
1
B
1.7
e 1
v
M
H E
2.5
2.1
2 mm
A
BF1105; BF1105R; BF1105WR
A
0.55
0.25
L p
A 1
0.45
0.25
Q
detail X
PROJECTION
0.2
EUROPEAN
v
H E
E
0.1
w
L p
Q
0.1
Product specification
y
A
ISSUE DATE
04-11-16
06-03-16
c
SOT143R
X