BF1105WR T/R NXP Semiconductors, BF1105WR T/R Datasheet - Page 8

• Manufacturer Part Number: BF1105WR T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1105WR T/R

• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 7 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT-4
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 7V
• Power Gain (typ)@vds: 38@5VdB
• Noise Figure (max): 2.5dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.6@5V@Gate 2pF
• Output Capacitance (typ)@vds: 1.2@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1105WR,115

NXP Semiconductors
1997 Dec 02
handbook, full pagewidth
handbook, full pagewidth
N-channel dual-gate MOS-FETs
V
L1 = 45 nH, 4 turns, internal diameter = 4 mm, 0.8 mm copper wire.
L2 = 160 nH, 3 turns, internal diameter = 8 mm, 0.8 mm copper wire; tapped at approximately half a turn from the cold side, to set G
C1 adjusted for G
V
L1 = 2 cm, silvered 0.8 mm copper wire 4 mm above ground plane.
L2 = 2 cm, silvered 0.8 mm copper wire 4 mm above ground plane.
L3 = 11 turns 0.5 mm copper wire without spacing, internal diameter = 3 mm, L = approx. 200 nH.
DS
DS
= 5 V, G
= 5 V, G
S
S
= 2 mS, G
= 3.3 mS, G
S
= 2 mS.
L
input
50 Ω
= 0.5 mS, f = 200 MHz.
L
= 1 mS, f = 800 MHz.
input
50 Ω
1 nF
5.5 pF
C1
2 to 18 pF
1 nF
L1
L1
1 nF
1 nF
1 nF
15
pF
V AGC
V AGC
Fig.16 Gain test circuit.
Fig.17 Gain test circuit.
0.5 to 3.5 pF
47 kΩ
1 nF
47 kΩ
BB405
G2
G1
G2
G1
V tun input
BF1105WR
BF1105R
BF1105WR
BF1105
BF1105R
BF1105
330 kΩ
8
1 nF
D
S
S
D
1 nF
1 nF
BF1105; BF1105R; BF1105WR
L2
V DS
0.5 to 3.5 pF
2 μH
BB405
10 pF
1 nF
L2
V tun output
V DS
output
330 kΩ
50 Ω
1 nF
L3
4 to 40 pF
1 nF
1 nF
MGM255
MGM256
output
50 Ω
Product specification
L
= 0.5 mS.