BF1105WR T/R NXP Semiconductors, BF1105WR T/R Datasheet - Page 2

• Manufacturer Part Number: BF1105WR T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1105WR T/R

• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 7 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT-4
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 7V
• Power Gain (typ)@vds: 38@5VdB
• Noise Figure (max): 2.5dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.6@5V@Gate 2pF
• Output Capacitance (typ)@vds: 1.2@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1105WR,115

NXP Semiconductors
FEATURES
 Short channel transistor with high
 Low noise gain controlled amplifier
 Internal self-biasing circuit to
APPLICATIONS
 VHF and UHF applications with 5 V
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1105,
BF1105R and BF1105WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
QUICK REFERENCE DATA
1997 Dec 02
V
I
P
y
C
C
F
X
T
SYMBOL
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
D
forward transfer admittance to input
capacitance ratio
up to 1 GHz.
ensure good cross-modulation
performance during AGC and good
DC stabilization.
supply voltage, such as television
tuners and professional
communications equipment.
j
DS
tot
mod
N-channel dual-gate MOS-FETs
ig1-ss
rss
fs

drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
operating junction temperature
PARAMETER
PINNING
handbook, 2 columns
BF1105 marking code: NEp.
PIN
1
2
3
4
Fig.1
T
f = 1 MHz
f = 800 MHz
input level for k = 1% at 40 dB AGC 100
amb
Top view
4
1
 80 C
Simplified outline
(SOT143B).
source
drain
gate 2
gate 1
CAUTION
DESCRIPTION
2
CONDITIONS
MSB014
3
2
alfpage
handbook, 2 columns
BF1105R marking code: NAp.
BF1105WR marking code: NA.



25




Fig.2
Fig.3
MIN.
BF1105; BF1105R;
3
2
Top view
3
Top view
2
Simplified outline
(SOT143R).
Simplified outline
(SOT343R).



31
2.2
25
1.7


TYP.
Product specification
BF1105WR
7
30
200

2.7
40
2.5

150
MSB842
MAX.
MSB035
4
1
4
1
V
mA
mW
mS
pF
fF
dB
dBV
C
UNIT