BF1105WR T/R NXP Semiconductors, BF1105WR T/R Datasheet - Page 7

• Manufacturer Part Number: BF1105WR T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1105WR T/R

• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 7 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT-4
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 7V
• Power Gain (typ)@vds: 38@5VdB
• Noise Figure (max): 2.5dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.6@5V@Gate 2pF
• Output Capacitance (typ)@vds: 1.2@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1105WR,115

NXP Semiconductors
1997 Dec 02
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
V
I
Fig.12 Input admittance as a function of frequency;
V
I
D
D
Fig.14 Forward transfer admittance and phase as
DS
DS
(mS)
(mS)
|y fs |
= 12 mA; T
= 12 mA; T
y is
10
10
10
10
= 5 V; V
= 5 V; V
10
10
−1
−2
1
2
1
2
10
10
typical values.
a function of frequency; typical values.
G2-S
G2-S
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
g is
2
b is
2
|y fs |
ϕ fs
f (MHz)
f (MHz)
MGM253
MGM251
10
10
3
−10
−10
−1
3
(deg)
ϕ fs
2
7
handbook, halfpage
handbook, halfpage
V
I
V
I
D
Fig.13 Reverse transfer admittance and phase as
D
(mS)
|y rs |
(μS)
DS
DS
y os
= 12 mA; T
= 12 mA; T
10
10
10
10
= 5 V; V
= 5 V; V
10
10
−1
−2
Fig.15 Output admittance as a function of
1
3
2
1
BF1105; BF1105R; BF1105WR
10
10
a function of frequency; typical values.
G2-S
G2-S
amb
amb
frequency; typical values.
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
2
2
|y rs |
ϕ rs
g os
b os
f (MHz)
f (MHz)
Product specification
MGM252
MGM254
10
10
3
−10
−10
−10
−1
3
(deg)
ϕ rs
3
2