BF1105WR T/R NXP Semiconductors, BF1105WR T/R Datasheet - Page 6

• Manufacturer Part Number: BF1105WR T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1105WR T/R

• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 7 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT-4
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 7V
• Power Gain (typ)@vds: 38@5VdB
• Noise Figure (max): 2.5dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.6@5V@Gate 2pF
• Output Capacitance (typ)@vds: 1.2@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1105WR,115

NXP Semiconductors
1997 Dec 02
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
V
f
unw
V
T
(dBμV)
Fig.11 Unwanted voltage for 1% cross-modulation
DS
V unw
Fig.9
j
G2-S
(mA)
= 25 C.
I D
= 60 MHz; T
= 5 V; V
110
100
16
12
90
80
= 4 V.
8
4
0
0
0
as a function of gain reduction;
typical values (see Fig.18).
Drain current as a function of drain-source
voltage; typical values.
G2nom
amb
= 4 V; I
= 25 C.
2
20
Dnom
= I
self bias
4
; f
w
40
gain reduction (dB)
= 50 MHz;
6
V DS (V)
fMGM248
MGM250
60
8
6
handbook, halfpage
V
Fig.10 Drain current as a function of gate 1 current;
DS
(mA)
I D
= 5 V; V
16
12
8
4
0
BF1105; BF1105R; BF1105WR
−8
typical values.
G2-S
= 4 V; T
−6
j
= 25 C.
−4
Product specification
−2
I G1 (μA)
MGM249
0