FYP1004DNTU Fairchild Semiconductor, FYP1004DNTU Datasheet
FYP1004DNTU
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FYP1004DNTU Summary of contents
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... Maximum Thermal Resistance, Junction to Case (per diode) JC Electrical Characteristics Symbol V Maximum Instantaneous Forward Voltage * FM I Maximum Instantaneous Reverse Current * RM * Pulse Test: Pulse Width=300 s, Duty Cycle 2% ©2001 Fairchild Semiconductor Corporation FYP1004DN TO-220 =25 C unless otherwise noted C Parameter @ T = 137 C C 60Hz Single Half-Sine Wave Parameter ...
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... Reverse Voltage, V Figure 3. Typical Junction Capacitance (per diode Square Wave 2 Duty Cycle=0 100 Case Temperature, T Figure 5. Forward Current Derating Curve ©2001 Fairchild Semiconductor Corporation 100 10 1 0.1 0.01 0.001 0 1.0 1.5 [V] F Figure 2. Typical Reverse Current vs. Reverse Voltage (per diode = 100µ ...
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... Package Demensions 1.27 2.54TYP [2.54 ©2001 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, March 2001 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ HiSeC™ ...