ISL9K3060G3 Fairchild Semiconductor, ISL9K3060G3 Datasheet - Page 4

• Manufacturer Part Number: ISL9K3060G3
• Description: DIODE DUAL 600V 30A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: Stealth™r

Specifications of ISL9K3060G3

• Voltage - Forward (vf) (max) @ If: 2.4V @ 30A
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 45ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1560©2002 Fairchild Semiconductor Corporation
Typical Performance Curves (Continued)
Figure 7. Reverse Recovery Softness Factor vs
Figure 9. Junction Capacitance vs Reverse
1000
2.5
2.0
1.5
1.0
0.5
800
600
400
200
200
0
0.01
1.0
0.1
10
I
I
F
F
0.1
-5
= 60A
= 15A
400
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
SINGLE PULSE
600
V
R
, REVERSE VOLTAGE (V)
Figure 11. Normalized Maximum Transient Thermal Impedance
I
F
Voltage
dI
= 30A
800
1
10
F
/dt
-4
1000
V
R
= 390V, T
1200
10
10
J
1400
= 125
-3
t, RECTANGULAR PULSE DURATION (s)
o
C
1600
100
10
Figure 8. Reverse Recovered Charge vs dI
-2
1200
1000
800
600
400
200
35
30
25
20
15
10
5
0
115
200
Figure 10. DC Current Derating Curve
V
R
= 390V, T
400
125
dI
F
10
/dt, CURRENT RATE OF CHANGE (A/µs)
J
-1
T
= 125
600
C
, CASE TEMPERATURE (
NOTES:
DUTY FACTOR: D = t
PEAK T
135
o
C
800
J
= P
145
DM
1000
x Z
I
10
I
I
F
F
F
P
0
= 60A
DM
= 30A
= 15A
JA
1
155
/t
x R
2
1200
o
C)
t
JA
1
t
2
+ T
ISL9K3060G3 Rev. C
165
1400
A
F
10
/dt
1600
1
175