1N5819 Fairchild Semiconductor, 1N5819 Datasheet - Page 2

• Manufacturer Part Number: 1N5819
• Description: DIODE SCHOTTKY 1A 40V DO41
• Manufacturer: Fairchild Semiconductor

Specifications of 1N5819

• Voltage - Forward (vf) (max) @ If: 600mV @ 1A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 110pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 1 A @ Ta=90C
• Max Surge Current: 25 A
• Configuration: Single
• Forward Voltage Drop: 0.6 V
• Maximum Reverse Leakage Current: 500 uA
• Operating Temperature Range: - 65 C to + 125 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1N5819TR; 1N5819TR

1N5817 - 1N5819 Rev. C2
© 2010 Fairchild Semiconductor Corporation
Typical Performance Characteristics
Figure 1. Forward Current Derating Curve
0.75
0.25
30
25
20
15
10
Figure 3. Non-Repetitive Surge Current
0.5
5
0
1
0
1
0
.375" 9.5 mm LEAD
INDUCTIVE LOAD
SINGLE PHASE
RESISTIVE OR
HALF WAVE
2
LENGTHS
20
60HZ
Number of Cycles at 60Hz
Lead Temperature [ºC]
40
5
60
JEDEC Method
8.3ms Single Half Sine-Wave
10
80
20
100
50
120
100
140
2
Figure 2. Forward Voltage Characteristics
0.1
400
200
100
20
10
80
60
40
20
10
1
0.2
0.1
1N5817
0.4
Figure 4. Total Capacitance
0.6
0.5
Forward Voltage, V
Reverse Voltage, V
0.8
1
1N5818
1
1N5819
1.2
5
T = 25 C
Pulse Width = 300μ μ μ μ S
1% Duty Cycle
1.4
10
F
J
R
[V]
T = 25 C
[V]
J
1.6
º
º
40 60 100
1.8
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2