RHRG75120 Fairchild Semiconductor, RHRG75120 Datasheet
RHRG75120
Manufacturer Part Number
RHRG75120
Description
DIODE HYPER 1200V 75A TO247-2
Manufacturer
Fairchild Semiconductor
Datasheet
1.RHRG75120.pdf
(4 pages)
Specifications of RHRG75120
Voltage - Forward (vf) (max) @ If
3.2V @ 75A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
75A
Current - Reverse Leakage @ Vr
250µA @ 1200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
100ns
Mounting Type
Through Hole, Radial
Package / Case
TO-247-2
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1200 V
Forward Voltage Drop
3.2 V
Recovery Time
100 ns
Forward Continuous Current
75 A
Max Surge Current
500 A
Reverse Current Ir
250 uA
Power Dissipation
190 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RHRG75120
Manufacturer:
FSC
Quantity:
3 000
Company:
Part Number:
RHRG75120
Manufacturer:
FSC
Quantity:
2 100
Company:
Part Number:
RHRG75120
Manufacturer:
FAIRCHILD
Quantity:
100
Company:
Part Number:
RHRG75120
Manufacturer:
FSC
Quantity:
3 000
Part Number:
RHRG75120
Manufacturer:
INTERSIL
Quantity:
20 000
Company:
Part Number:
RHRG75120-W
Manufacturer:
HARRIS
Quantity:
100
©2008 Fairchild Semiconductor Corporation
75A, 1200V Hyperfast Diode
The RHRG75120 is a hyperfast diode with soft recovery
characteristics (t
ultrafast diodes and is silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of high frequency switching
power supplies and other power switching applications. Its
low stored charge and hyperfast soft recovery characteristic
minimize ringing and electrical noise in many power
switching circuits, thus reducing power loss in the switching
transistors.
Formerly developmental type TA49042.
Ordering Information
NOTE: When ordering, use the entire part number.
Symbol
Absolute Maximum Ratings
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
RHRG75120
(T
(Square Wave, 20kHz)
(Halfwave, 1 Phase, 60Hz)
PART NUMBER
C
= 42
o
C)
rr
< 85ns). It has half the recovery time of
TO-247
PACKAGE
K
A
T
Data Sheet
C
= 25
RHRG75120
o
C
BRAND
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <85ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
(BOTTOM SIDE
CATHODE
METAL)
October 2008
JEDEC STYLE TO-247
STG
F(AV)
RWM
RRM
FRM
FSM
AVL
, T
R
D
J
RHRG75120
RHRG75120
-65 to 175
1200
1200
1200
150
500
190
75
50
ANODE
RHRG75120 Rev. B1
CATHODE
UNITS
mJ
o
W
V
V
V
A
A
A
C
o
C
Related parts for RHRG75120
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
RHRG75120 Summary of contents
Page 1
... Data Sheet 75A, 1200V Hyperfast Diode The RHRG75120 is a hyperfast diode with soft recovery characteristics (t < 85ns). It has half the recovery time of rr ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifi variety of high frequency switching power supplies and other power switching applications ...
Page 2
... I RM 1000 3.0 3.5 4.0 4.5 FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE TYP MAX - 3.2 - 2.6 - 250 - 100 0.8 through 25 (See Figure 6 175 C 100 o 100 0.1 0 200 400 600 800 V , REVERSE VOLTAGE (V) R UNITS V V µ C/W 1000 1200 RHRG75120 Rev. B1 ...
Page 3
... FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT ©2008 Fairchild Semiconductor Corporation (Continued /dt = 100A/µ DUT CURRENT SENSE + IGBT SQ. WAVE 100 T , CASE TEMPERATURE ( C FIGURE 4. CURRENT DERATING CURVE FIGURE 6. t WAVEFORMS AND DEFINITIONS rr V AVL FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS 125 150 175 0. RHRG75120 Rev.B1 ...
Page 4
... Semiconductor. The datasheet is for reference information only. tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ SerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ ® ® Definition RHRG75120 Rev.B1 Rev. I37 ...