1N4448 Fairchild Semiconductor, 1N4448 Datasheet - Page 3

• Manufacturer Part Number: 1N4448
• Description: DIODE HI CONDUCTANCE 100V DO-35
• Manufacturer: Fairchild Semiconductor

Specifications of 1N4448

• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 200mA
• Current - Reverse Leakage @ Vr: 5µA @ 75V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Product: General Purpose Diodes
• Forward Continuous Current: 0.3 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1 V
• Maximum Power Dissipation: 0.5 W
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2
Typical Characteristics
Figure 5. Forward Voltage vs Forward Current
0.90
0.85
0.80
0.75
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
Figure 9. Average Rectified Current (I
0
10
0
0
Ta= 25
vs Ambient Temperature (T
2
o
20
Figure 7. Total Capacitance
C
30
Ambient Temperature (
Forward Current, I
4
VF - 10 to 800mA
REVERSE VOLTAGE (V)
50
50
6
100
8
(Continued)
F
[mA]
100
10
200
o
C)
300
A
12
T
)
A
= 25
F(AV)
500
o
14
C
)
800
150
3
Figure 6. Forward Voltage vs Ambient Temperature
900
800
700
600
500
400
300
500
400
300
200
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
0.01
10
0
Typical
Figure 8. Reverse Recovery Time vs
SOT-23
Figure 10. Power Derating Curve
VF - 0.01 - 20 mA (- 40 to +65°C)
0.03
IF = 10mA , IRR = 1.0 mA , Rloop = 100 Ohms
Reverse Recovery Current, I
Reverse Recovery Current
20
50
Forward Current, I
0.1
Temperature [
30
DO-35
Ta= 25
0.3
Ta= -40
100
o
C
Ta= +65
o
40
C
1
o
F
C]
[mA]
o
C
rr
150
[mA]
3
50
Ta = 25
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10
o
C
200
60