1N4448 Fairchild Semiconductor, 1N4448 Datasheet - Page 3
![DIODE HI CONDUCTANCE 100V DO-35](/photos/5/24/52433/261-do-35_sml.jpg)
1N4448
Manufacturer Part Number
1N4448
Description
DIODE HI CONDUCTANCE 100V DO-35
Manufacturer
Fairchild Semiconductor
Datasheet
1.1N4148TR.pdf
(4 pages)
Specifications of 1N4448
Voltage - Forward (vf) (max) @ If
1V @ 100mA
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
5µA @ 75V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Product
General Purpose Diodes
Forward Continuous Current
0.3 A
Max Surge Current
4 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
1 V
Maximum Power Dissipation
0.5 W
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2
Typical Characteristics
Figure 5. Forward Voltage vs Forward Current
0.90
0.85
0.80
0.75
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
Figure 9. Average Rectified Current (I
0
10
0
0
Ta= 25
vs Ambient Temperature (T
2
o
20
Figure 7. Total Capacitance
C
30
Ambient Temperature (
Forward Current, I
4
VF - 10 to 800mA
REVERSE VOLTAGE (V)
50
50
6
100
8
(Continued)
F
[mA]
100
10
200
o
C)
300
A
12
T
)
A
= 25
F(AV)
500
o
14
C
)
800
150
3
Figure 6. Forward Voltage vs Ambient Temperature
900
800
700
600
500
400
300
500
400
300
200
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
0.01
10
0
Typical
Figure 8. Reverse Recovery Time vs
SOT-23
Figure 10. Power Derating Curve
VF - 0.01 - 20 mA (- 40 to +65°C)
0.03
IF = 10mA , IRR = 1.0 mA , Rloop = 100 Ohms
Reverse Recovery Current, I
Reverse Recovery Current
20
50
Forward Current, I
0.1
Temperature [
30
DO-35
Ta= 25
0.3
Ta= -40
100
o
C
Ta= +65
o
40
C
1
o
F
C]
[mA]
o
C
rr
150
[mA]
3
50
Ta = 25
www.fairchildsemi.com
10
o
C
200
60