BAS29 Fairchild Semiconductor, BAS29 Datasheet
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BAS29
Manufacturer Part Number
BAS29
Description
DIODE GEN PURP 120V 200MA SOT23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BAS29.pdf
(2 pages)
Specifications of BAS29
Voltage - Forward (vf) (max) @ If
1V @ 200mA
Voltage - Dc Reverse (vr) (max)
120V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
100nA @ 90V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
120 V
Forward Voltage Drop
1.25 V @ 0.4 A
Recovery Time
50 ns
Forward Continuous Current
0.2 A
Max Surge Current
2 A
Reverse Current Ir
0.1 uA
Power Dissipation
0.35 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAS29
Manufacturer:
Fairchild Semiconductor
Quantity:
16 960
Part Number:
BAS29
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BAS29,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BAS29TR
Manufacturer:
INF
Quantity:
5 015
2002 Fairchild Semiconductor Corporation
V
I
I
T
T
P
R
Small Signal Diode
V
V
I
C
t
Symbol
F(AV)
FSM
Symbol
Absolute Maximum Ratings*
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics
*
R
rr
Symbol
stg
J
RRM
D
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Pulse test : Pulse width=300us, Duty Cycle=2%
R
F
*
T
JA
*
3
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
SOT-23
1
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Parameter
2
Parameter
Parameter
T
A
= 25°C unless otherwise noted
BAS29
T
A
= 25°C unless otherwise noted
1
L20
I
I
I
I
I
I
V
V
V
I
R
R
F
F
F
F
F
F
R
R
R
L
= 10 mA
= 50 mA
= 100 mA
= 200 mA
= 400 mA
= I
= 1.0 mA
= 90 V
= 90 V, T
= 0, f = 1.0 MHz
= 100
3
Test Conditions
R
= 30 mA, I
2
A
= 150 C
RR
= 3.0 mA,
Connection Diagram
-55 to +150
Min
120
Value
Value
120
200
150
350
357
1.0
2.0
1
Max
3
0.75
0.84
0.90
1.00
1.25
100
100
2.0
50
2NC
Units
Units
Units
mW
mA
C/W
V
A
A
C
C
nA
pF
ns
V
V
V
V
V
V
A
BAS29, Rev. A
Related parts for BAS29
BAS29 Summary of contents
Page 1
... 100 200 400 150 1.0 MHz mA 3.0 mA 100 L Connection Diagram 3 1 2NC Value Units 120 V 200 mA 1.0 A 2.0 A -55 to +150 C 150 C Value Units 350 mW 357 C/W Min Max Units V 120 0.75 V 0.84 V 0.90 V 1.00 V 1.25 V 100 nA 100 A 2 BAS29, Rev. A ...
Page 2
CROSSVOLT â â â â Rev. H5 ...