RGP10D Fairchild Semiconductor, RGP10D Datasheet - Page 2

• Manufacturer Part Number: RGP10D
• Description: DIODE GPP FAST 1A 200V DO-41
• Manufacturer: Fairchild Semiconductor

Specifications of RGP10D

• Voltage - Forward (vf) (max) @ If: 1.3V @ 1A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2001 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 3. Forward Voltage Characteristics
Figure 1. Forward Current Derating Curve
0.75
0.25
0.01
0.5
0.1
10
1
0
1
25
0.4
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS
50
NONINDUCTIVE
50
NONINDUCTIVE
50V
(approx)
50
0.6
Reverse Recovery Time Characterstic and Test Circuit Diagram
Forward Voltage, V
Lead Temperature [ºC]
75
0.8
DUT
T = 25 C
Pulse Width = 300 s
2% Duty Cycle
50
NONINDUCTIVE
A
100
1
º
OSCILLOSCOPE
(Note 1)
100
125
1.2
F
50
20
10
5
2
1
[V]
1
150
1.4
Pulse
Generator
(Note 2)
Figure 5. Total Capacitance
2
(-)
(+)
Reverse Voltage, V
1.6
175
5
10
Figure 4. Reverse Current vs Reverse Voltage
20
0.01
R
Figure 2. Non-Repetitive Surge Current
0.1
-0.25A
10
+0.5A
30
25
20
15
10
[V]
-1.0A
1
5
0
0
1
0
Percent of Rated Peak Reverse Voltage [%]
50
20
2
100
Number of Cycles at 60Hz
1.0cm
40
trr
5
60
SET TIME BASE FOR
T = 125 C
T = 75 C
10
T = 25 C
A
A
A
5/ 10 ns/ cm
80
º
º
º
20
100
RPG10A - RPG10M, Rev. C
120
50
140
100