EGP10D Fairchild Semiconductor, EGP10D Datasheet - Page 94

• Manufacturer Part Number: EGP10D
• Description: DIODE FAST GPP 1A 200V DO-41
• Manufacturer: Fairchild Semiconductor

Specifications of EGP10D

• Voltage - Forward (vf) (max) @ If: 950mV @ 1A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

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Bipolar Power Transistors – Horizontal Deflection Output Transistors
TO-220F NPN Configuration
FJPF6806D
TO-264 NPN Configuration
FJL6820
FJL6825
FJL6920
TO-3PF NPN Configuration
BU508AF
FJAF6806D
FJAF6808D
FJAF6810
FJAF6810D
FJAF6812
FJAF6815
FJAF6820
FJAF6910
FJAF6916
FJAF6920
Products
V
CBO
1500
1500
1500
1700
1500
1500
1500
1500
1500
1500
1500
1500
1700
1700
1700
(V) V
CEO
750
750
750
800
700
750
750
750
750
750
750
750
800
800
800
(V) V
EBO
6
6
6
6
5
6
6
6
6
6
6
6
6
6
6
(V)
I
C
20
25
20
10
10
12
15
20
10
16
20
6
5
6
8
(A)
P
C
200
200
200
40
60
50
50
60
60
60
60
60
60
60
60
(W)
Min
4
6
6
6
2
4
5
5
5
5
5
6
7
6
6
Max
10
–
7
9
9
9
7
8
8
8
8
8
9
9
9
2-89
Discrete Power Products –
@I
h
FE
4.5
8.5
11
12
11
10
11
11
C
4
4
5
6
6
8
6
(A)
@V
CE
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V)
Typ (V) Max (V) @I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
5
3
3
3
1
5
5
3
3
3
3
3
3
3
3
Bipolar Transistors and JFETs
V
CE (sat)
4.5
11
12
11
10
11
10
11
C
4
4
5
6
6
8
6
(A) @I
2.75
2.75
2.75
2.75
1.2
1.5
2.5
1.5
1.5
2.5
B
1
3
2
1
2
(A)
t
STG
3
3
3
3
–
3
3
3
3
3
3
3
4
4
3
(µs) t
F
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.3
0.3
0.2
(µs)
–