EGP10G Fairchild Semiconductor, EGP10G Datasheet - Page 201
![DIODE FAST GPP 1A 400V DO-41](/photos/5/24/52465/261-do-41_sml.jpg)
EGP10G
Manufacturer Part Number
EGP10G
Description
DIODE FAST GPP 1A 400V DO-41
Manufacturer
Fairchild Semiconductor
Specifications of EGP10G
Voltage - Forward (vf) (max) @ If
1.25V @ 1A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 400V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
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Manufacturer
Quantity
Price
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Part Number:
EGP10G
Manufacturer:
VISHAY
Quantity:
150 000
Part Number:
EGP10G
Manufacturer:
VISHAY/威世
Quantity:
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Part Number:
EGP10G-E3/73
Manufacturer:
VISHAY/威世
Quantity:
20 000
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Discrete
MOSFET: QFET
F Q P 18 N 50 __ V2
(Continued)
®
C: Advanced QFET C-series
Empty: Previous Version of QFET
V2: Advanced QFET V2-series
Empty: Standard Product
L: Logic Level Product
F: Fast Recovery MOSFET
N: N-Channel
P: P-Channel
A: TO-3P
B: D
D: D-PAK
E: TO-126
H: TO-247
N: TO-92
P: TO-220
S: 8-SOP
Q: QFET Technology
C: SuperFET Technology
Series
Optional
Voltage Rating (x 10)
Channel Polarity
Current Rating
Package
Base Technology
Fairchild
2
-PAK
AF: TO-3PF
I: I
U: I-PAK
G: 8DIP
L: TO-264
NL: TO-92L
PF: TO-220F
T: SOT-223
2
8-8
-PAK
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