EGP10J Fairchild Semiconductor, EGP10J Datasheet - Page 119

• Manufacturer Part Number: EGP10J
• Description: DIODE FAST GPP 1A 600V DO-41
• Manufacturer: Fairchild Semiconductor

Specifications of EGP10J

• Voltage - Forward (vf) (max) @ If: 1.7V @ 1A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

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Small Signal Transistors – Hybrid Transistors (Continued)
SuperSOT PNP Configuration
FMBS549
FMB3906
FMB857B
FMB200
FMB2907A
FMBA56
Products
V
CEO
30
40
45
45
60
80
(V)
V
CBO
35
40
50
60
60
80
(V)
V
EBO
5
5
5
6
5
4
(V)
Max (A)
0.2
0.1
0.5
0.6
0.5
I
1
C
Min
100
100
220
100
100
100
2-114
Discrete Power Products –
Max
300
300
475
450
300
–
h
FE
@V
10
CE
2
1
5
1
1
(V) @I
C
500
150
100
10
10
2
(mA)
Bipolar Transistors and JFETs
Max (V)
0.75
0.25
0.4
0.3
0.4
1.6
@I
V
CE (sat)
2000
C
200
500
100
50
10
(mA) @I
B
200
0.5
20
50
10
5
(mA)