S2J Fairchild Semiconductor, S2J Datasheet
S2J
Manufacturer Part Number
S2J
Description
DIODE GPP GEN PURP 2A 600V SMB
Manufacturer
Fairchild Semiconductor
Datasheet
1.S2A.pdf
(3 pages)
Specifications of S2J
Voltage - Forward (vf) (max) @ If
1.15V @ 2A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
1µA @ 600V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
2µs
Capacitance @ Vr, F
30pF @ 4V, 1MHz
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
1.15 V
Recovery Time
2000 ns
Forward Continuous Current
2 A @ Ta=100C
Max Surge Current
50 A
Reverse Current Ir
1 uA
Power Dissipation
2.35 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
S2J-13
Manufacturer:
DIODES
Quantity:
29 100
Company:
Part Number:
S2J-13-F
Manufacturer:
Diodes Inc
Quantity:
27 419
Part Number:
S2J-13-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
Part Number:
S2J-E3/52T
Manufacturer:
Vishay Semiconductors
Quantity:
561
Part Number:
S2J-E3/52T
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
S2J-LT
Manufacturer:
MCC
Quantity:
89 000
Part Number:
S2JA
Manufacturer:
TSC/台半
Quantity:
20 000
Part Number:
S2JGF
Manufacturer:
PANJIT/强茂
Quantity:
20 000
2001 Fairchild Semiconductor Corporation
Symbol
Symbol
Symbol
General Purpose Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
*
Thermal Characteristics
*
Electrical Characteristics
V
I
I
T
T
V
t
I
C
F(AV)
FSM
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
P
R
Device mounted on FR-4 PCB 0.013 mm.
rr
R
Features
•
•
•
•
stg
J
RRM
F
T
D
JA
Easy pick and place.
High Current Capability.
High Surge Current Capability.
Low forward Voltage Drop.
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current, @ T
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Forward Voltage @ 2.0 A
Reverse Recovery Time
Reverse Current @ rated V
Total Capacitance
Power Dissipation
Thermal Resistance, Junction to Ambient*
I
V
F
R
= 0.5 A, I
8.3 ms Single Half-Sine-Wave
= 4.0 V, f = 1.0 MHz
R
= 1.0 A, I
Parameter
Parameter
Parameter
rr
R
= 0.25 A
T
S2A - S2M
A
= 25°C unless otherwise noted
T
T
T
A
A
A
A
= 25°C unless otherwise noted
= 25 C
= 125 C
= 100°C
2A
2A
50
COLOR BAND DENOTES CATHODE
SMB/DO-214AA
100
2B
2B
200
2D
2D
-65 to +150
-65 to +150
Device
Value
Value
400
1.15
2G
2G
2.35
125
2.0
2.0
1.0
50
30
53
600
2J
2J
800
2K
2K
1000
2M
2M
S2A-S2M, Rev. C
Units
Units
Units
C/W
pF
V
A
A
W
V
C
C
A
A
s
Related parts for S2J
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
S2J Summary of contents
Page 1
... Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics Symbol Parameter V Forward Voltage @ 2 Reverse Recovery Time 0 1 Reverse Current @ rated Total Capacitance 4 1.0 MHz R 2001 Fairchild Semiconductor Corporation S2A - S2M SMB/DO-214AA COLOR BAND DENOTES CATHODE T = 25°C unless otherwise noted 100 = 100° 25°C unless otherwise noted 0. ...
Page 2
... Figure 1. Forward Current Derating Curve 10 1 0.1 º Pulse Width = 300 s 2% Duty Cycle 0.01 0.4 0.6 0.8 1 Forward Voltage, V Figure 3. Forward Voltage Characteristics 100 2001 Fairchild Semiconductor Corporation General Purpose Rectifiers (Glass Passivated 125 150 175 1 Figure 2. Non-Repetitive Surge Current 10 1 0.1 0. ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...