S2G Fairchild Semiconductor, S2G Datasheet

DIODE GPP GEN PURP 2A 400V SMB

S2G

Manufacturer Part Number
S2G
Description
DIODE GPP GEN PURP 2A 400V SMB
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of S2G

Voltage - Forward (vf) (max) @ If
1.15V @ 2A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
1µA @ 400V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
2µs
Capacitance @ Vr, F
30pF @ 4V, 1MHz
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.15 V
Recovery Time
2000 ns
Forward Continuous Current
2 A @ Ta=100C
Max Surge Current
50 A
Reverse Current Ir
1 uA
Power Dissipation
2.35 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Rectifier Type
Switching Diode
Peak Rep Rev Volt
400V
Avg. Forward Curr (max)
2A
Rev Curr
1uA
Peak Non-repetitive Surge Current (max)
50A
Forward Voltage
1.15V
Operating Temp Range
-65C to 150C
Package Type
DO-214AA
Rev Recov Time
2000ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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2001 Fairchild Semiconductor Corporation
Symbol
Symbol
Symbol
General Purpose Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
*
Thermal Characteristics
*
Electrical Characteristics
V
I
I
T
T
V
t
I
C
F(AV)
FSM
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
P
R
Device mounted on FR-4 PCB 0.013 mm.
rr
R
Features
stg
J
RRM
F
T
D
JA
Easy pick and place.
High Current Capability.
High Surge Current Capability.
Low forward Voltage Drop.
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current, @ T
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Forward Voltage @ 2.0 A
Reverse Recovery Time
Reverse Current @ rated V
Total Capacitance
Power Dissipation
Thermal Resistance, Junction to Ambient*
I
V
F
R
= 0.5 A, I
8.3 ms Single Half-Sine-Wave
= 4.0 V, f = 1.0 MHz
R
= 1.0 A, I
Parameter
Parameter
Parameter
rr
R
= 0.25 A
T
S2A - S2M
A
= 25°C unless otherwise noted
T
T
T
A
A
A
A
= 25°C unless otherwise noted
= 25 C
= 125 C
= 100°C
2A
2A
50
COLOR BAND DENOTES CATHODE
SMB/DO-214AA
100
2B
2B
200
2D
2D
-65 to +150
-65 to +150
Device
Value
Value
400
1.15
2G
2G
2.35
125
2.0
2.0
1.0
50
30
53
600
2J
2J
800
2K
2K
1000
2M
2M
S2A-S2M, Rev. C
Units
Units
Units
C/W
pF
V
A
A
W
V
C
C
A
A
s

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S2G Summary of contents

Page 1

... Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics Symbol Parameter V Forward Voltage @ 2 Reverse Recovery Time 0 1 Reverse Current @ rated Total Capacitance 4 1.0 MHz R 2001 Fairchild Semiconductor Corporation S2A - S2M SMB/DO-214AA COLOR BAND DENOTES CATHODE T = 25°C unless otherwise noted 100 = 100° 25°C unless otherwise noted 0. ...

Page 2

... Figure 1. Forward Current Derating Curve 10 1 0.1 º Pulse Width = 300 s 2% Duty Cycle 0.01 0.4 0.6 0.8 1 Forward Voltage, V Figure 3. Forward Voltage Characteristics 100 2001 Fairchild Semiconductor Corporation General Purpose Rectifiers (Glass Passivated 125 150 175 1 Figure 2. Non-Repetitive Surge Current 10 1 0.1 0. ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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