SB530 Fairchild Semiconductor, SB530 Datasheet
SB530
Manufacturer Part Number
SB530
Description
DIODE SCHOTTKY 5A 30V DO-201AD
Manufacturer
Fairchild Semiconductor
Datasheet
1.SB530.pdf
(3 pages)
Specifications of SB530
Voltage - Forward (vf) (max) @ If
550mV @ 5A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
5A
Current - Reverse Leakage @ Vr
500µA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F
500pF @ 4V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
5 A @ Ta=75C
Max Surge Current
150 A
Configuration
Single
Forward Voltage Drop
0.55 V
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 50 C to + 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
SB530FS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SB530
Manufacturer:
LRC/乐山
Quantity:
20 000
Part Number:
SB530-E
Manufacturer:
LRC/乐山
Quantity:
20 000
2001 Fairchild Semiconductor Corporation
Schottky Rectifiers
*
Thermal Characteristics
Electrical Characteristics
Absolute Maximum Ratings*
Symbol
Symbol
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
V
I
I
T
T
V
I
C
F(AV)
FSM
P
R
R
•
Features
•
•
•
•
•
stg
J
RRM
F
T
D
Glass passivated
JA
High current capability, low V
High surge capacity.
Low power loss, high efficiency.
Metal to silicon rectifier, majority
carrier conduction.
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Forward Voltage @ 5.0 A
Reverse Current @ rated V
Total Capacitance
Power Dissipation
Thermal Resistance, Junction to Ambient
V
.375 " lead length @ T
R
8.3 ms Single Half-Sine-Wave
= 4.0 V, f = 1.0 MHz
Parameter
Parameter
Parameter
F.
SB520 - SB5100
R
A
= 75 C
T
T
T
A
A
A
= 25°C unless otherwise noted
= 25 C
= 100 C
T
A
= 25°C unless otherwise noted
520
520
20
COLOR BAND DENOTES CATHODE
0.55
500
530
530
50
30
DO-201AD
540
540 550 560 580 5100
40
-50 to +150
-50 to +150
Device
Value
Value
550
150
50
5.0
0.5
5.0
25
0.67
560
60
380
25
580 5100
80
0.85
100
SB520 - SB5100, Rev. C
Units
Units
Units
mA
mA
C/W
pF
V
A
A
W
V
C
C
Related parts for SB530
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
SB530 Summary of contents
Page 1
... Thermal Resistance, Junction to Ambient R JA Electrical Characteristics Symbol Parameter V Forward Voltage @ 5 Reverse Current @ rated Total Capacitance 4 1.0 MHz R 2001 Fairchild Semiconductor Corporation SB520 - SB5100 DO-201AD COLOR BAND DENOTES CATHODE T = 25°C unless otherwise noted A 520 530 25°C unless otherwise noted A 520 530 ...
Page 2
... Pulse Width = 300 S 2% Duty Cycle 0.1 0.4 0.5 0.6 0.7 0.8 Forward Voltage, V Figure 3. Forward Voltage Characteristics 5000 2000 1000 500 200 100 2001 Fairchild Semiconductor Corporation 150 120 SB550-SB5100 125 150 175 1 Figure 2. Non-Repetitive Surge Current 20 SB520-SB540 10 SB550-SB5100 1 SB520-SB540 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...