ISL9R8120P2 Fairchild Semiconductor, ISL9R8120P2 Datasheet - Page 4

• Manufacturer Part Number: ISL9R8120P2
• Description: 8 AMP 1200V STEALTH DIODE
• Manufacturer: Fairchild Semiconductor
• Series: Stealth™r

Specifications of ISL9R8120P2

• Voltage - Forward (vf) (max) @ If: 3.3V @ 8A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 300ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2, TO-220AC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1200 V
• Forward Voltage Drop: 3.3 V
• Recovery Time: 44 ns
• Forward Continuous Current: 8 A
• Max Surge Current: 100 A
• Reverse Current Ir: 100 uA
• Power Dissipation: 71 W
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Repetitive Reverse Voltage Vrrm Max: 1.2kV
• Forward Current If(av): 8A
• Forward Voltage Vf Max: 3.3V
• Reverse Recovery Time Trr Max: 44ns
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: Q1563503

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves (Continued)
Figure 7. Reverse Recovery Softness Factor vs
12
11
10
500
400
300
200
100
Figure 9. Junction Capacitance vs Reverse
9
8
7
6
5
4
3
2
100
0.03
0
200
0.1
dI
I
F
F
300
I
= 4A
F
/dt, CURRENT RATE OF CHANGE (A/µs)
= 16A
V
400
R
, REVERSE VOLTAGE (V)
Voltage
dI
500
1
F
/dt
I
F
= 8A
600
8
4
0
6
2
V
700
90
Figure 11. DC Current Derating Curve
R
= 780V, T
10
800
100
C
f = 1MH
= 125
900
T
C
o
, CASE TEMPERATURE (
C
110
Z
1000
100
120
Figure 10. Reverse Recovery Current and Times
Figure 8. Reverse Recovered Charge vs dI
-4.4
-4.8
-5.2
-5.6
-6.0
2000
1800
1600
1400
1200
1000
800
600
400
100
25
130
V
R
o
C)
t
= 780V, T
200
RR
dI
50
140
F
I
F
vs Case Temperature
300
/dt, CURRENT RATE OF CHANGE (A/µs)
T
= 8A, V
I
C
C
RM(REC)
, CASE TEMPERATURE (
= 125
400
R
150
o
75
C
= 780V, dI
500
F
100
600
/dt = 200A/µs
ISL9R8120P2 / ISL9R8120S3S Rev. A
700
o
C)
125
800
I
I
F
I
F
F
= 16A
= 4A
900
= 8A
150
F
500
400
350
300
450
/dt
1000