MBR1645 Fairchild Semiconductor, MBR1645 Datasheet
MBR1645
Manufacturer Part Number
MBR1645
Description
DIODE SCHOTTKY 16A 45V TO-220AC
Manufacturer
Fairchild Semiconductor
Datasheet
1.MBR1660.pdf
(3 pages)
Specifications of MBR1645
Voltage - Forward (vf) (max) @ If
630mV @ 16A
Voltage - Dc Reverse (vr) (max)
45V
Current - Average Rectified (io)
16A
Current - Reverse Leakage @ Vr
200µA @ 45V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
TO-220-2, TO-220AC
Product
Schottky Diodes
Peak Reverse Voltage
45 V
Forward Continuous Current
16 A @ Ta=125C
Max Surge Current
150 A
Configuration
Single
Forward Voltage Drop
0.63 V
Maximum Reverse Leakage Current
200 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR1645
Manufacturer:
MCC
Quantity:
15 000
Part Number:
MBR1645
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
MBR1645-E3-45
Manufacturer:
VISHAY
Quantity:
1 000
Company:
Part Number:
MBR1645CT
Manufacturer:
MCC
Quantity:
15 000
Part Number:
MBR1645CT
Manufacturer:
TOBA
Quantity:
20 000
Company:
Part Number:
MBR1645G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MBR1645G
Manufacturer:
ON/安森美
Quantity:
20 000
2001 Fairchild Semiconductor Corporation
Symbol
Symbol
Features
•
•
•
•
•
•
Absolute Maximum Ratings*
*
Thermal Characteristics
Electrical Characteristics
Symbol
P
R
R
Schottky Rectifiers
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
V
I
I
T
T
D
V
I
I
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
F(AV)
FSM
JA
JL
R
RRM
protection applications.
RRM
stg
J
F
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Forward Voltage
Reverse Current @ rated V
Peak Repetitive Reverse Surge Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
.375 " lead length @ T
8.3 ms Single Half-Sine-Wave
2.0 us Pulse Width, f = 1.0 KHz
Parameter
Parameter
Parameter
MBR1635 - MBR1660
I
I
F =
F =
A
16 A, T
16 A, T
R
= 125 C
T
T
A
A
T
= 125 C
= 25 C
A
C
= 25°C unless otherwise noted
C
= 125 C
= 25 C
T
A
= 25°C unless otherwise noted
TO-220AC
1
2
1635
1635
35
0.63
0.57
0.2
1.0
40
1645
1645
45
-65 to +175
-65 to +150
Device
Value
Value
2.0
1.5
150
60
16
1650
1650
50
PIN 1 +
PIN 2 -
CASE Positive
0.75
0.65
1.0
0.5
50
1660
1660
MBR1635 - MBR1660 Rev. C
60
CASE
+
Units
Units
Units
C/W
C/W
mA
mA
W
V
A
A
V
V
A
C
C
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MBR1645 Summary of contents
Page 1
... R JL Electrical Characteristics Symbol Parameter V Forward Voltage F I Reverse Current @ rated Peak Repetitive Reverse Surge Current RRM 2.0 us Pulse Width 1.0 KHz 2001 Fairchild Semiconductor Corporation 1 2 TO-220AC T = 25°C unless otherwise noted A 1635 35 = 125 25°C unless otherwise noted A 1635 0.63 ...
Page 2
... Percent of Rated Peak Reverse Voltage [%] F Figure 4. Reverse Current vs Reverse Voltage 100 10 1 0.1 10 100 0.01 [V] R Figure 6. Thermal Impedance Characteristics Schottky Rectifier (continued 100 Number of Cycles at 60Hz MBR1635-MBR1645 º 125 C A MBR1650-MBR1660 º MBR1635-MBR1645 º MBR1650-MBR1660 100 120 140 0 100 Pulse Duration [s] MBR1635 - MBR1660 Rev. C ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...