FFP15S60STU Fairchild Semiconductor, FFP15S60STU Datasheet
FFP15S60STU
Manufacturer Part Number
FFP15S60STU
Description
DIODE STEALTHII 600V 15A TO220-2
Manufacturer
Fairchild Semiconductor
Series
Stealth™r
Datasheet
1.FFP15S60STU.pdf
(5 pages)
Specifications of FFP15S60STU
Voltage - Forward (vf) (max) @ If
2.6V @ 15A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
15A
Current - Reverse Leakage @ Vr
100µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35ns
Mounting Type
Through Hole
Package / Case
TO-220-2, TO-220AC
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
2.6 V
Recovery Time
35 ns
Forward Continuous Current
15 A
Max Surge Current
150 A
Reverse Current Ir
100 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FFP15S60STU
Manufacturer:
FSC
Quantity:
5 000
Company:
Part Number:
FFP15S60STU
Manufacturer:
IR
Quantity:
3 000
Part Number:
FFP15S60STU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2007 Fairchild Semiconductor Corporation
FFP15S60S Rev. A
Absolute Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FFP15S60S
Features
• High Speed Switching, t
• High Reverse Voltage and High Reliability
• RoHS compliant
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
V
V
V
I
I
T
R
F(AV)
FSM
Device Marking
J
RRM
RWM
R
θJC
, T
Symbol
Symbol
STG
F15S60S
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating and Storage Temperature Range
Maximum Thermal Resistance, Junction to Case
1. Cathode
rr
FFP15S60STU
< 35ns @ I
Device
TO-220-2L
F
= 15A
2. Anode
T
C
= 25
Parameter
Parameter
o
Package
TO-220-2L
C unless otherwise noted
@ T
C
= 123
1
15A, 600V STEALTH
The FFP15S60S is STEALTH
characteristics. It is silicon nitride passivated ion-implanted epi-
taxial planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
o
C
Reel Size
-
STEALTH II Rectifier
1. Cathode
Tape Width
TM
2. Anode
-
TM
-65 to +150
II rectifier with soft recovery
TM
Ratings
Ratings
II Rectifier
600
600
600
150
15
1.3
October 2007
Quantity
www.fairchildsemi.com
50
Units
Units
o
C/W
o
V
V
V
A
A
C
tm
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FFP15S60STU Summary of contents
Page 1
... Thermal Characteristics Symbol R Maximum Thermal Resistance, Junction to Case θJC Package Marking and Ordering Information Device Marking Device F15S60S FFP15S60STU ©2007 Fairchild Semiconductor Corporation FFP15S60S Rev. A 15A, 600V STEALTH The FFP15S60S is STEALTH = 15A F characteristics silicon nitride passivated ion-implanted epi- taxial planar construction. ...
Page 2
Electrical Characteristics Symbol I = 15A 15A 600V 600V 1A, di/dt = 100A/µ ...
Page 3
Typical Performance Characteristics Figure 1. Typical Forward Voltage Drop vs. Forward Current 125 0 Forward Voltage, V Figure 3. Typical Junction Capacitance 180 150 120 ...
Page 4
Mechanical Dimensions FFP15S60S Rev. A TO-220-2L 4 Dimensions in Millimeters www.fairchildsemi.com ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ® ...