RHRP15120 Fairchild Semiconductor, RHRP15120 Datasheet

DIODE HYPER 1200V 15A TO-220

RHRP15120

Manufacturer Part Number
RHRP15120
Description
DIODE HYPER 1200V 15A TO-220
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of RHRP15120

Voltage - Forward (vf) (max) @ If
3.2V @ 15A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
15A
Current - Reverse Leakage @ Vr
100µA @ 1200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
75ns
Mounting Type
Through Hole
Package / Case
TO-220-2, TO-220AC
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1200 V
Forward Voltage Drop
3.2 V
Recovery Time
75 ns
Forward Continuous Current
15 A
Max Surge Current
200 A
Reverse Current Ir
100 uA
Power Dissipation
100 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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©2002 Fairchild Semiconductor Corporation
15A, 1200V Hyperfast Diode
The RHRP15120 is a hyperfast diode with soft recovery
characteristics (t
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49098.
Ordering Information
NOTE: When ordering, use the entire part number.
Symbol
Absolute Maximum Ratings
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
RHRP15120
(T
(Square Wave, 20kHz)
(Halfwave, 1 Phase, 60Hz)
PART NUMBER
C
= 140
o
C)
rr
< 65ns). It has half the recovery time of
TO-220AC
PACKAGE
K
A
T
Data Sheet
C
= 25
RHR15120
o
C, Unless Otherwise Specified
BRAND
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <65ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
CATHODE
(FLANGE)
January 2002
JEDEC TO-220AC
STG
F(AV)
RWM
RRM
FRM
FSM
AVL
, T
R
D
J
RHRP15120
RHRP15120
-65 to 175
1200
1200
1200
ANODE
200
100
15
30
20
CATHODE
RHRP15120 Rev. B
UNITS
mJ
o
W
V
V
V
A
A
A
C
o
C

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RHRP15120 Summary of contents

Page 1

... Data Sheet 15A, 1200V Hyperfast Diode The RHRP15120 is a hyperfast diode with soft recovery characteristics (t < 65ns). It has half the recovery time of rr ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifi ...

Page 2

... I RM 1000 0. MIN TYP MAX - - 3 2 100 - - 500 - - 150 - - 1.5 through 25 (See Figure 9 175 C 100 o 100 0 200 400 600 800 V , REVERSE VOLTAGE (V) R FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE UNITS V V µ A µ C/W 1000 1200 RHRP15120 Rev. B ...

Page 3

... Fairchild Semiconductor Corporation (Continued) 150 125 100 FIGURE 100 175 150 125 100 100 V , REVERSE VOLTAGE ( 100 C, dI /dt = 100A/µ 0 FORWARD CURRENT ( AND t CURVES vs FORWARD CURRENT SQ. WAVE 115 130 145 CASE TEMPERATURE ( C FIGURE 6. CURRENT DERATING CURVE 150 200 10 15 160 175 C) RHRP15120 Rev. B ...

Page 4

... R < 0.1Ω 1/2LI [V /( AVL R(AVL) R(AVL IGBT (BV > DUT CES R(AVL) CURRENT SENSE Q 1 DUT FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation DUT CURRENT SENSE + FIGURE 11. AVALANCHE CURRENT AND VOLTAGE FIGURE 9. t WAVEFORMS AND DEFINITIONS rr V AVL WAVEFORMS 0. RHRP15120 Rev. B ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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