ISL9R18120G2 Fairchild Semiconductor, ISL9R18120G2 Datasheet
ISL9R18120G2
Manufacturer Part Number
ISL9R18120G2
Description
DIODE STEALTH 1200V 18A TO247-2
Manufacturer
Fairchild Semiconductor
Series
Stealth™r
Datasheet
1.ISL9R18120S3ST.pdf
(6 pages)
Specifications of ISL9R18120G2
Voltage - Forward (vf) (max) @ If
3.3V @ 18A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
18A
Current - Reverse Leakage @ Vr
100µA @ 1200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
70ns
Mounting Type
Through Hole, Radial
Package / Case
TO-247-2
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1200 V
Forward Voltage Drop
3.3 V @ 18 A
Recovery Time
70 ns
Forward Continuous Current
15 A
Max Surge Current
200 A
Reverse Current Ir
100 uA
Power Dissipation
125 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ISL9R18120G2
Manufacturer:
TI/NSC
Quantity:
1 000
Part Number:
ISL9R18120G2
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2004 Fairchild Semiconductor Corporation
ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S
18A, 1200V Stealth™ Diode
General Description
The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are
Stealth™ diodes optimized for low loss performance in high
frequency hard switched applications. The Stealth™ family
exhibits low reverse recovery current (I
exceptionally soft recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low I
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with a 1200V NPT IGBT to
provide the most efficient and highest power density design at
lower cost.
Device Maximum Ratings
Package
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
T
Symbol
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
V
J
V
I
T
E
I
I
F(AV)
, T
FRM
RWM
FSM
RRM
V
P
T
PKG
AVL
R
D
L
STG
2 LEAD TO-247
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
RM(REC)
and short t
ANODE
(BOTTOM SIDE
CATHODE
METAL)
CATHODE
RM(REC)
a
phase reduce loss
T
) and
C
= 25°C unless otherwise noted
JEDEC TO-220AC
Parameter
C
= 92
o
C)
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . t
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
CATHODE
(FLANGE)
ANODE
CATHODE
N / C
ANODE
JEDEC TO-263AB
ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. B
-55 to 150
Ratings
1200
1200
1200
CATHODE
(FLANGE)
200
125
300
260
18
36
20
March 2004
Symbol
b
/ t
rr
Units
< 45ns
a
mJ
°C
°C
°C
K
A
W
V
V
V
A
A
A
> 5.0
o
C
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ISL9R18120G2 Summary of contents
Page 1
... JEDEC TO-220AC ANODE CATHODE CATHODE (FLANGE 25°C unless otherwise noted C Parameter March 2004 / < 45ns rr Symbol JEDEC TO-263AB CATHODE (FLANGE ANODE Ratings Units 1200 1200 1200 18 36 200 125 20 mJ -55 to 150 300 260 ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. B > 5 °C °C °C ...
Page 2
... Tape Width Quantity N/A 30 N/A 50 24mm 800 Min Typ Max T = 25° 100 125° 1 25°C - 2.7 3 125°C - 2.5 3 30V - 30V - 300 - - 6 950 - - 400 - - 235 - - 5 2 370 - - - 1 ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. B Units µ µ µC A/µs °C/W °C/W °C/W ...
Page 3
... 30A, 15A, 7. 30A, 15A, 7. 400 600 800 1000 1200 dI /dt, CURRENT RATE OF CHANGE (A/µs) F and t Curves 780V 125 400 600 800 1000 1200 dI /dt, CURRENT RATE OF CHANGE (A/µ /dt F ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. B 1.1 1 1400 I = 30A 15A F = 7.5A F 1400 ...
Page 4
... CURRENT RATE OF CHANGE (A/µ 18A 780V, dI /dt = 300A/µ RM(REC 100 125 CASE TEMPERATURE ( Case Temperature 140 150 C) ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev 30A 15A 7.5A F 1400 /dt F 400 380 360 340 320 300 280 260 240 150 ...
Page 5
... CES R(AVL) CURRENT SENSE Q 1 DUT Figure 15. Avalanche Energy Test Circuit ©2004 Fairchild Semiconductor Corporation - RECTANGULAR PULSE DURATION ( CURRENT 0 SENSE + Figure 14 Figure 16. Avalanche Current and Voltage NOTES: DUTY FACTOR PEAK 0. Waveforms and Definitions rr V AVL Waveforms ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev ...
Page 6
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...