RURP3060 Fairchild Semiconductor, RURP3060 Datasheet

DIODE UFAST 600V 30A TO-220AC

RURP3060

Manufacturer Part Number
RURP3060
Description
DIODE UFAST 600V 30A TO-220AC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of RURP3060

Voltage - Forward (vf) (max) @ If
1.5V @ 30A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
30A
Current - Reverse Leakage @ Vr
250µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
60ns
Mounting Type
Through Hole
Package / Case
TO-220-2, TO-220AC
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
1.5 V
Recovery Time
60 ns
Forward Continuous Current
30 A
Max Surge Current
325 A
Reverse Current Ir
250 uA
Power Dissipation
125 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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©2002 Fairchild Semiconductor Corporation
30A, 600V Ultrafast Diode
The RURP3060 is an ultrafast diode (t
recovery characteristics. It has a low forward voltage drop
and is of planar, silicon nitride passivated, ion-implanted,
epitaxial construction.
This device is intended for use as an energy steering/
clamping diode and rectifier in a variety of switching power
supplies and other power switching applications. Its low
stored charge and ultrafast recovery with soft recovery
characteristics minimize ringing and electrical noise in many
power switching circuits, thus reducing power loss in the
switching transistor.
Formerly developmental type TA09903.
Ordering Information
NOTE: When ordering, use the entire part number.
Symbol
Absolute Maximum Ratings
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current (T
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
RURP3060
(Square Wave, 20kHz)
(Halfwave 1 Phase 60Hz)
PART NUMBER
TO-220AC
PACKAGE
K
A
C
= 130
T
Data Sheet
C
rr
= 25
RURP3060
o
< 55ns) with soft
C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
C, Unless Otherwise Specified
BRAND
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . .< 55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supply
• Power Switching Circuits
• General Purpose
Packaging
January 2002
CATHODE
(FLANGE)
JEDEC TO-220AC
STG
F(AV)
RWM
RRM
FRM
FSM
AVL
, T
R
D
J
RURP3060
-55 to 175
RURP3060
ANODE
600
600
600
325
125
30
70
20
CATHODE
RURP3060 Rev. B
UNITS
mJ
o
W
V
V
V
A
A
A
C
o
C

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RURP3060 Summary of contents

Page 1

... Data Sheet 30A, 600V Ultrafast Diode The RURP3060 is an ultrafast diode (t rr recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted, epitaxial construction. This device is intended for use as an energy steering/ clamping diode and rectifi variety of switching power supplies and other power switching applications ...

Page 2

... I RM 1000 1.5 2 2.5 FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE MIN TYP MAX - - - - - - - - - - - - - through 25 (See Figure 6 175 C 100 10 o 100 0.01 0 100 200 300 400 V , REVERSE VOLTAGE (V) R UNITS 1.5 V 1.3 V µ A 250 1.2 C/W 500 600 RURP3060 Rev. B ...

Page 3

... FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation (Continued DUT CURRENT SENSE + FIGURE 8. AVALANCHE CURRENT AND VOLTAGE SQ. WAVE 100 120 140 T , CASE TEMPERATURE ( C FIGURE 4. CURRENT DERATING CURVE FIGURE 6. t WAVEFORMS AND DEFINITIONS rr V AVL WAVEFORMS 160 180 RURP3060 Rev. B ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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