ISL9R3060P2 Fairchild Semiconductor, ISL9R3060P2 Datasheet
ISL9R3060P2
Manufacturer Part Number
ISL9R3060P2
Description
DIODE STEALTH 600V 30A TO-220AC
Manufacturer
Fairchild Semiconductor
Series
Stealth™r
Datasheet
1.ISL9R3060P2.pdf
(6 pages)
Specifications of ISL9R3060P2
Voltage - Forward (vf) (max) @ If
2.4V @ 30A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
30A
Current - Reverse Leakage @ Vr
100µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
45ns
Mounting Type
Through Hole
Package / Case
TO-220-2, TO-220AC
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
2.4 V @ 30 A
Recovery Time
45 ns
Forward Continuous Current
30 A
Max Surge Current
325 A
Reverse Current Ir
100 uA
Power Dissipation
200 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
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Manufacturer
Quantity
Price
Company:
Part Number:
ISL9R3060P2
Manufacturer:
Fairchild Semiconductor
Quantity:
471
Company:
Part Number:
ISL9R3060P2
Manufacturer:
APT
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5 000
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20 000
©2004 Fairchild Semiconductor Corporation
ISL9R3060G2, ISL9R3060P2
30A, 600V Stealth™ Diode
General Description
The ISL9R3060G2 and ISL9R3060P2 are Stealth™
diodes optimized for low loss performance in high
frequency hard switched applications. The Stealth™ family
exhibits low reverse recovery current (I
exceptionally soft recovery under typical operating
conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low I
in switching transistors. The soft recovery minimizes
ringing, expanding the range of conditions under which the
diode may be operated without the use of additional
snubber circuitry. Consider using the Stealth™ diode with
an SMPS IGBT to provide the most efficient and highest
power density design at lower cost.
Formerly developmental type TA49411.
Device Maximum Ratings
Package
(BOTTOM SIDE
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
CATHODE
T
Symbol
METAL)
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
V
J
V
I
T
E
I
I
F(AV)
, T
FRM
RWM
FSM
RRM
V
P
T
PKG
AVL
R
D
L
STG
JEDEC STYLE 2 LEAD TO-247
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
RRM
and short t
a
RRM
phase reduce loss
T
C
= 25°C unless otherwise noted
) and
ANODE
Parameter
CATHODE
CATHODE
(FLANGE)
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . t
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
CATHODE
ANODE
JEDEC TO-220AC
-55 to 175
Ratings
ISL9R3060G2, ISL9R3060P2 Rev. C3
600
600
600
325
200
300
260
30
70
20
May 2004
Symbol
b
/ t
rr
Units
< 35ns
a
mJ
K
A
°C
°C
°C
W
V
V
V
A
A
A
> 1.2
o
C
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ISL9R3060P2 Summary of contents
Page 1
... ISL9R3060G2, ISL9R3060P2 30A, 600V Stealth™ Diode General Description The ISL9R3060G2 and ISL9R3060P2 are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (I exceptionally soft recovery under typical operating conditions ...
Page 2
... 390V 125° 30A /dt = 1000A 390V 125° Tape Width Quantity - - - - Min Typ Max T = 25° 100 125° 1 25°C - 2.1 2 125°C - 1.7 2 120 - = 30V - 30V - 2 110 - - 1 450 - - 1. 730 - - 800 - - - 0. ISL9R3060G2, ISL9R3060P2 Rev. C3 Units A/µs °C/W °C/W °C/W ...
Page 3
... 60A, 30A, 15A F 400 600 800 1000 1200 1400 dI /dt, CURRENT RATE OF CHANGE ( and t Curves 60A = 390V 125° 30A 15A F 400 600 800 1000 1200 1400 dI /dt, CURRENT RATE OF CHANGE ( /dt F ISL9R3060G2, ISL9R3060P2 Rev. C3 600 1600 1600 ...
Page 4
... V , REVERSE VOLTAGE (V) R 10-3 10-2 t, RECTANGULAR PULSE DURATION (s) = 390V 125° 60A 30A 15A F 400 600 800 1000 1200 1400 dI /dt, CURRENT RATE OF CHANGE ( 100 NOTES: DUTY FACTOR PEAK 10-1 100 ISL9R3060G2, ISL9R3060P2 Rev. C3 1600 /dt F 101 ...
Page 5
... R < 0 50V DD EAVL = 1/2LI2 [V /( R(AVL) R(AVL IGBT (BV > DUT V ) CES R(AVL) CURRENT SENSE Q1 DUT Figure 13. Avalanche Energy Test Circuit ©2004 Fairchild Semiconductor Corporation CURRENT 0 SENSE + VDD - Figure 12 Figure 14. Avalanche Current and Voltage 0. Waveforms and Definitions rr V AVL Waveforms ISL9R3060G2, ISL9R3060P2 Rev. C3 ...
Page 6
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...