RHRG5060 Fairchild Semiconductor, RHRG5060 Datasheet

DIODE HYPER 600V 50A TO247-2

RHRG5060

Manufacturer Part Number
RHRG5060
Description
DIODE HYPER 600V 50A TO247-2
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of RHRG5060

Voltage - Forward (vf) (max) @ If
2.1V @ 50A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
50A
Current - Reverse Leakage @ Vr
250µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole, Radial
Package / Case
TO-247-2
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
2.1 V
Recovery Time
50 ns
Forward Continuous Current
50 A
Max Surge Current
500 A
Reverse Current Ir
250 uA
Power Dissipation
125 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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©2002 Fairchild Semiconductor Corporation
50A, 600V Hyperfast Diode
The RHRG5060 is a hyperfast diode with soft recovery
characteristics (t
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49065.
Ordering Information
NOTE: When ordering, use the entire part number.
Symbol
Absolute Maximum Ratings
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
RHRG5060
(T
(Square Wave, 20kHz)
(Halfwave, 1 Phase, 60Hz)
PART NUMBER
C
= 93
o
C)
rr
< 45ns). It has half the recovery time of
TO-247
PACKAGE
K
A
T
C
Data Sheet
= 25
RHRG5060
o
C, Unless Otherwise Specified
BRAND
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <45ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
SIDE METAL)
CATHODE
(BOTTOM
January 2002
JEDEC STYLE TO-247
STG
RWM
F(AV)
RRM
FRM
FSM
AVL
, T
R
D
J
RHRG5060
-65 to 175
RHRG5060
600
600
600
100
500
150
50
40
ANODE
RHRG5060 Rev. B
CATHODE
UNITS
mJ
o
W
V
V
V
A
A
A
C
o
C

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RHRG5060 Summary of contents

Page 1

... Data Sheet 50A, 600V Hyperfast Diode The RHRG5060 is a hyperfast diode with soft recovery characteristics (t < 45ns). It has half the recovery time of rr ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifi ...

Page 2

... I RM 3000 1000 100 10 1 0.1 0.01 2 2.5 3 FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE TYP MAX - 2.1 - 1.7 - 250 - 1 140 - - 1.0 through 25 (See Figure 9 175 C o 100 100 200 300 400 V , REVERSE VOLTAGE (V) R UNITS V V µ C/W 500 600 RHRG5060 Rev. B ...

Page 3

... F 125 t rr 100 FIGURE 350 300 250 200 150 100 100 V , REVERSE VOLTAGE ( 100 C, dI /dt = 100A/µ FORWARD CURRENT ( AND t CURVES vs FORWARD CURRENT SQ. WAVE 125 75 100 T , CASE TEMPERATURE ( C FIGURE 6. CURRENT DERATING CURVE 150 200 175 150 o C) RHRG5060 Rev. B ...

Page 4

... R < 0.1Ω 1/2LI [V /( AVL R(AVL) R(AVL IGBT (BV > DUT CES R(AVL) CURRENT SENSE Q 1 DUT FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation DUT CURRENT SENSE + FIGURE 11. AVALANCHE CURRENT AND VOLTAGE FIGURE 9. t WAVEFORMS AND DEFINITIONS rr V AVL WAVEFORMS 0. RHRG5060 Rev. B ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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