IDB45E60 Infineon Technologies, IDB45E60 Datasheet - Page 5

• Manufacturer Part Number: IDB45E60
• Description: DIODE 600V 71A TO263-3
• Manufacturer: Infineon Technologies

Specifications of IDB45E60

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 2V @ 45A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 71A (DC)
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 140ns
• Mounting Type: Surface Mount
• Product: Power Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 45 A
• Max Surge Current: 162 A
• Configuration: Single
• Recovery Time: 140 ns
• Forward Voltage Drop: 2 V
• Maximum Reverse Leakage Current: 50 uA
• Maximum Power Dissipation: 187 W
• Operating Temperature Range: - 55 C to + 175 C
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Packages: PG-TO263-3
• If (typ): 45.0 A
• If (max): 71.0 A
• If,sm (max): 162.0 A
• Vf (typ): 1.5 V
• Ir (max): 50.0 µA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IDB45E60XT

Rev.2.2
5 Typ. reverse recovery time
t
parameter: V
7 Typ. reverse recovery current
I
parameter: V
rr
rr
= f (di
= f (di
ns
A
450
350
300
250
200
150
100
35
25
20
15
10
200
5
200
F
F
/dt)
/dt)
300
300
R
R
400
400
= 400V, T
= 400V, T
90A
45A
22.5A
500
500
600
600
j
j
= 125°C
= 125°C
700
700
90A
45A
22.5A
800
800
A/µs
A/µs
di
di
F
F
1000
1000
/dt
/dt
Page 5
6 Typ. reverse recovery charge
Q
parameter: V
8 Typ. reverse recovery softness factor
S = f(di
parameter: V
rr
nC
=f(di
4000
3000
2500
2000
1500
1000
6.5
5.5
4.5
3.5
200
8
7
6
5
4
3
200
F
F
/dt)
/dt)
300
300
R
R
400
400
= 400V, T
= 400V, T
500
500
600
600
22,5A
90A
45A
j
j
= 125 °C
= 125°C
700
700
90A
45A
22,5A
2007-09-01
IDB45E60
800
800
A/µs
A/µs
di
di
F
F
/dt
1000
1000
/dt