IDP18E120 Infineon Technologies, IDP18E120 Datasheet

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IDP18E120

Manufacturer Part Number
IDP18E120
Description
DIODE 1200V 31A TO220-2
Manufacturer
Infineon Technologies
Datasheet

Specifications of IDP18E120

Package / Case
TO-220-2
Voltage - Forward (vf) (max) @ If
2.15V @ 18A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
31A (DC)
Current - Reverse Leakage @ Vr
100µA @ 1200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
195ns
Mounting Type
Through Hole
Product
Switching Diodes
Peak Reverse Voltage
1200 V
Forward Continuous Current
31 A
Max Surge Current
78 A
Configuration
Single
Recovery Time
195 ns
Forward Voltage Drop
2.15 V
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Packages
PG-TO220-2
If (typ)
18.0 A
If (max)
31.0 A
If,sm (max)
78.0 A
Vf (typ)
1.65 V
Ir (max)
100.0 µA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDP18E120
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IDP18E120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Fast Switching EmCon Diode
Type
IDP18E120
Maximum Ratings, at T
Parameter
Repetitive peak reverse voltage
Continous forward current
T
T
Surge non repetitive forward current
T
Maximum repetitive forward current
T
Power dissipation
T
T
Operating and storage temperature
Soldering temperature
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Rev.2.2
Feature
• 1200 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• Easy paralleling
C
C
C
C
C
C
=25°C
=90°C
=25°C, t
=25°C, t
=25°C
=90°C
p
p
=10 ms, sine halfwave
limited by T
Package
PG-TO220-2-2.
jmax
, D=0.5
j
= 25 °C, unless otherwise specified
Ordering Code
Page 1
-
Symbol
V
I
I
I
P
T
T
F
FSM
FRM
j ,
S
RRM
tot
T
stg
Marking
D18E120
Product Summary
V
I
V
T
F
RRM
F
jmax
-55...+150
Pin 1
Value
1200
C
19.8
113
260
54
31
78
47
C
PG-TO220-2-2.
PIN 2
IDP18E120
A
2007-04-24
1200
1.65
150
A
18
PIN 3
Unit
V
A
W
°C
°C
-
C
°C
V
A
V

Related parts for IDP18E120

IDP18E120 Summary of contents

Page 1

... C Operating and storage temperature Soldering temperature wavesoldering, 1.6mm (0.063 in.) from case for 10s Rev.2.2 Ordering Code - = 25 °C, unless otherwise specified Symbol FSM I FRM Page 1 IDP18E120 Product Summary V RRM jmax PG-TO220-2-2. C Marking Pin 1 PIN 2 C D18E120 Value 1200 RRM 31 19.8 78 ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.2 Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol Page 2 IDP18E120 Values Unit min. typ. max 1.1 K ...

Page 3

... Symbol t rr =25°C j =125°C j =150° rrm =25°C j =125°C j =150° =25°C j =125°C j =150° =25°C j =125°C j =150°C j Page 3 IDP18E120 Values Unit min. typ. max 195 - - 280 - - 300 - 1880 - - 3200 - - 3540 ...

Page 4

... Rev.2.2 2 Diode forward current I = f(T F parameter 100 °C 150 Typ. diode forward voltage 2.6 V 2.2 1.8 1.6 1.4 1 Page 4 IDP18E120 ) C ≤ 150° 100 ) j 36A 2 18A 9A -60 - °C 150 T C 100 °C 160 T j 2007-04-24 ...

Page 5

... A/µs 1000 di / Typ. reverse recovery softness factor S = f(di = 125°C parameter: V 700 800 A/µs 1000 di /dt F Page 5 IDP18E120 /dt 800V 125 ° 36A 18A 9A 200 300 400 500 600 700 /dt 800V 125° 36A ...

Page 6

... Max. transient thermal impedance thJC p parameter : IDP18E120 single pulse - Rev.2 0.50 0.20 0.10 0.05 0.02 0. Page 6 IDP18E120 2007-04-24 ...

Page 7

... Rev.2 symbol Page 7 IDP18E120 TO-220-2-2 dimensions [mm] [inch] min max min max A 9.70 10.10 0.3819 0.3976 B 15.30 15.90 0.6024 0.6260 C 0.65 0.85 0.0256 0.0335 D 3.55 3.85 0.1398 0.1516 E 2.60 3.00 0.1024 0.1181 F 9.00 9.40 0.3543 0.3701 G 13.00 14.00 0.5118 0.5512 H 17.20 17.80 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev.2.2 Page 8 IDP18E120 2007-04-24 ...

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