IDV02S60C Infineon Technologies, IDV02S60C Datasheet - Page 3

• Manufacturer Part Number: IDV02S60C
• Description: DIODE SCHOTTKY 600V 2A TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDV02S60C

• Diode Type: Silicon Carbide Schottky
• Voltage - Forward (vf) (max) @ If: 1.9V @ 2A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 2A (DC)
• Current - Reverse Leakage @ Vr: 15µA @ 600V
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 60pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 2A
• Forward Voltage Vf Max: 1.9V
• Reverse Recovery Time Trr Max: 10ns
• Forward Surge Current Ifsm Max: 11.5A
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 2.0 A
• Qc (typ): 3.2 nC
• Package: TO-220 FullPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IDT02S60C; IDT02S60C; SP000274984; SP000659198

Rev. 2.0
1 Power dissipation
P
parameter: R
3 Typ. forward characteristic
I
parameter: T
F
tot
=f(V
=f(T
20
16
12
F
8
4
0
3
2
1
0
); t
C
25
0
)
p
=400 µs
thJC(max)
j
1
75
-55ºC
T
C
V
[°C]
2
25ºC
F
100ºC
[V]
175ºC
150ºC
125
3
175
page 3
4
2 Diode forward current
I
parameter: D=t
4 Typ. forward characteristic in surge current
mode
I
F
F
=f(T
=f(V
14
12
10
15
12
C
F
8
6
4
2
0
9
6
3
0
); T
); t
25
0
p
j
=400 µs; parameter: T
≤175 °C
0.5
0.1
0.3
0.7
P
1
/T
2
100ºC
75
25ºC
-55ºC
T
C
V
4
[°C]
F
[V]
j
125
150ºC
6
IDT02S60C
175ºC
2007-04-25
175
8